X-On Electronics has gained recognition as a prominent supplier of SI4459ADY-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI4459ADY-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI4459ADY-T1-GE3 Vishay

Hot SI4459ADY-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI4459ADY-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET -30V Vds 20V Vgs SO-8
Datasheet: SI4459ADY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8184 ea
Line Total: USD 0.82

Availability - 5763
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 0.832
5000 : USD 0.832

5763
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 0.8184
10 : USD 0.6746
30 : USD 0.6047
100 : USD 0.5327
500 : USD 0.4424
1000 : USD 0.4222

12457
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 1.518
10 : USD 1.2995
100 : USD 1.0614
500 : USD 0.9913

2430
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 1.833
5 : USD 1.677
13 : USD 1.274
36 : USD 1.209

3480
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 34
Multiples : 1
34 : USD 1.2285
50 : USD 1.1683
100 : USD 1.1652
200 : USD 1.1457
500 : USD 1.1423
1000 : USD 1.1407
2000 : USD 1.1343
2500 : USD 1.1327

2425
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 1.2297

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI4459ADY-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4459ADY-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The SI4459ADY-T1-GE3 MOSFET manufactured by Vishay is an advanced low-voltage MOSFET designed for switching and amplifier applications in a small SO-8 package. The MOSFET features a drain-source voltage (Vds) rating of -30V and a gate-source voltage (Vgs) rating of 20V. The device is optimized for DC and pulsed switching applications with low on-resistance and fast switching speeds to reduce switching losses. Additionally, the device has an enhanced 3rd-generation staggered cell structure for reduced gate charge and improved body-diode performance. It also utilizes Vishay’s tight-tolerance technology to ensure superior performance over temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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