X-On Electronics has gained recognition as a prominent supplier of SI4435DDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4435DDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4435DDY-T1-GE3 Vishay

SI4435DDY-T1-GE3 electronic component of Vishay
SI4435DDY-T1-GE3 Vishay
SI4435DDY-T1-GE3 MOSFETs
SI4435DDY-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI4435DDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 11.4A 5.0W 24mohm @ 10V
Datasheet: SI4435DDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3902 ea
Line Total: USD 1.95 
Availability - 1120
Ship by Thu. 08 May to Tue. 13 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
26675
Ship by Thu. 01 May to Wed. 07 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.2938
5000 : USD 0.2938
7500 : USD 0.2875
10000 : USD 0.2875
12500 : USD 0.2813

1120
Ship by Thu. 08 May to Tue. 13 May
MOQ : 5
Multiples : 5
5 : USD 0.3902
50 : USD 0.312
150 : USD 0.1881
500 : USD 0.16
2500 : USD 0.1337
5000 : USD 0.1261

2386
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 1.19
10 : USD 0.9338
50 : USD 0.3752
137 : USD 0.3542

19400
Ship by Thu. 01 May to Wed. 07 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.5267

4850
Ship by Thu. 01 May to Wed. 07 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.4928

339
Ship by Thu. 01 May to Wed. 07 May
MOQ : 112
Multiples : 1
112 : USD 0.5783
114 : USD 0.5711
250 : USD 0.5637

94575
Ship by Thu. 01 May to Wed. 07 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.3048
5000 : USD 0.2865

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI4435DDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4435DDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI4435DDY-T1-GE3 is a MOSFET produced by the Vishay Corporation. The part is a 30V, 11.4A, 5.0W power transistor with a gate-to-source breakdown voltage of 24mohm at 10V. The component uses N-channel technology, which is ideal for medium- and low-voltage power control applications. The part is incredibly efficient and has high-speed switching capability. This product is extremely reliable and can withstand a wide range of environmental conditions. The SI4435DDY-T1-GE3 has a low thermal resistance and excellent temperature stability, making it suitable for demanding applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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