New Product Si4436DY Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.036 at V = 10 V 8 GS 60 10.5 nC Optimized for Low Side Synchronous 0.043 at V = 4.5 V 8 GS Rectifier Operation 100 % R and UIS Tested g APPLICATIONS CCFL Inverter SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS a T = 25 C 8 C T = 70 C 6.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 6.1 A b, c T = 70 C 4.8 A A I 25 Pulsed Drain Current DM T = 25 C 4.2 C I Continuous Source-Drain Diode Current S b, c T = 25 C 2.1 A I Avalanche Current 15 AS L = 0.1 mH E Single-Pulse Avalanche Energy 11.2 mJ AS T = 25 C 5 C T = 70 C 3.2 C Maximum Power Dissipation P W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R Maximum Junction-to-Ambient t 10 s 38 50 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 20 25 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 73664 www.vishay.com S09-0322-Rev. B, 02-Mar-09 1New Product Si4436DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 V DS GS D V Temperature Coefficient V /T 55 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 25 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.6 A 0.030 0.036 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.2 A 0.035 0.043 GS D a g V = 15 V, I = 4.6 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1100 iss C V = 30 V, V = 0 V, f = 1 MHz Output Capacitance 90 pF oss DS GS C Reverse Transfer Capacitance 55 rss V = 30 V, V = 10 V, I = 4.6 A 21 32 DS GS D Q Total Gate Charge g 10.5 16 nC Q V = 30 V, V = 4.5 V, I = 4.6 A Gate-Source Charge 3.5 gs DS GS D Q Gate-Drain Charge 4.2 gd R Gate Resistance f = 1 MHz 3.3 5 g t Turn-On Delay Time 20 30 d(on) t V = 30 V, R = 5.4 Rise Time 150 225 r DD L t I 5.6 A, V = 4.5 V, R = 1 Turn-Off DelayTime 20 30 d(off) D GEN g t Fall Time 60 90 f ns t Turn-On Delay Time 10 15 d(on) t V = 30 V, R = 5.4 Rise Time 15 25 r DD L t I 5.6 A, V = 10 V, R = 1 Turn-Off DelayTime 25 40 d(off) D GEN g t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C 4.2 S C A a Pulse Diode Forward Current I 25 SM Body Diode Voltage V I = 2 A 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 25 50 ns rr Body Diode Reverse Recovery Charge Q 25 50 nC rr I = 5.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 19 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73664 2 S09-0322-Rev. B, 02-Mar-09