Si4447DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.054 at V = - 10 V - 4.5 GS - 40 9 100 % R Tested g 0.072 at V = - 4.5 V - 3.9 GS 100 % UIS Tested APPLICATIONS CCFL Inverter SO-8 S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free) Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 40 DS V Gate-Source Voltage V 16 GS T = 25 C - 4.5 - 3.3 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 3.6 - 2.7 A I Pulsed Drain Current - 30 A DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S Avalanche Current I 16 AS L = 0.1 mH E Single Pulse Avalanche Energy 13 mJ AS T = 25 C 21.1 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 50 62.5 a Maximum Junction-to-Ambient R thJA Steady State 85 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 73662 www.vishay.com S09-0322-Rev. B, 02-Mar-09 1Si4447DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.8 - 2.2 V GS(th) DS GS D V Temperature Coefficient V /T - 40 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.4 GS(th) GS(th) J Gate-Source Leakage I V = 0 V, V = 16 V 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4.5 A 0.045 0.054 GS D a R Drain-Source On-State Resistance DS(on) V = - 15 V, I = - 4.5 A 0.059 0.072 GS D a g V = - 15 V, I = - 4.5 A 13 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.79 - 1.2 V Diode Forward Voltage SD S GS b Dynamic C Input Capacitance 805 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 120 pF oss DS GS C Reverse Transfer Capacitance 85 rss Q Total Gate Charge 914 g Q V = - 20 V, V = - 4.5 V, I = - 4.5 A Gate-Source Charge 2 nC gs DS GS D Q Gate-Drain Charge 3.6 gd R Gate Resistance f = 1 MHz 11.5 18 g t Turn-On Delay Time 813 d(on) t V = - 15 V, R = 15 Rise Time 12 18 r DD L t I - 1 A, V = - 10 V, R = 6 Turn-Off DelayTime 74 110 ns d(off) D GEN g t Fall Time 38 60 f Source-Drain Reverse Recovery Time t 27 45 rr I = 1.7 A, dI/dt = 100 A/s F Body Diode Reverse Recovery Charge Q 17 26 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 T = - 55 C C V = 10 V thru 4 V GS 16 25 C 16 12 125 C 12 3 V 8 8 4 4 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73662 2 S09-0322-Rev. B, 02-Mar-09 I - Drain Current (A) D I - Drain Current (A) D