X-On Electronics has gained recognition as a prominent supplier of SI4447DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4447DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4447DY-T1-GE3 Vishay

SI4447DY-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI4447DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 40V 4.5A 2.0W 54mohm 10V
Datasheet: SI4447DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6612 ea
Line Total: USD 0.66 
Availability - 3109
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1769
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3743
5000 : USD 0.3406
10000 : USD 0.3362

47
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4533
10 : USD 0.4441
25 : USD 0.378

908
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4386
10 : USD 0.385
30 : USD 0.3639
100 : USD 0.3352
500 : USD 0.3237
1000 : USD 0.316

3109
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6612
10 : USD 0.5578
100 : USD 0.4451
500 : USD 0.3657
1000 : USD 0.3438
2500 : USD 0.3139
5000 : USD 0.3024
10000 : USD 0.3013

47
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 21
Multiples : 1
21 : USD 0.4441
25 : USD 0.378

1769
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1824
Multiples : 1824
1824 : USD 0.3743

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
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Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4447DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4447DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4447DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.054 at V = - 10 V - 4.5 GS - 40 9 100 % R Tested g 0.072 at V = - 4.5 V - 3.9 GS 100 % UIS Tested APPLICATIONS CCFL Inverter SO-8 S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free) Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 40 DS V Gate-Source Voltage V 16 GS T = 25 C - 4.5 - 3.3 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 3.6 - 2.7 A I Pulsed Drain Current - 30 A DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S Avalanche Current I 16 AS L = 0.1 mH E Single Pulse Avalanche Energy 13 mJ AS T = 25 C 21.1 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 50 62.5 a Maximum Junction-to-Ambient R thJA Steady State 85 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 73662 www.vishay.com S09-0322-Rev. B, 02-Mar-09 1Si4447DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.8 - 2.2 V GS(th) DS GS D V Temperature Coefficient V /T - 40 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.4 GS(th) GS(th) J Gate-Source Leakage I V = 0 V, V = 16 V 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4.5 A 0.045 0.054 GS D a R Drain-Source On-State Resistance DS(on) V = - 15 V, I = - 4.5 A 0.059 0.072 GS D a g V = - 15 V, I = - 4.5 A 13 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.79 - 1.2 V Diode Forward Voltage SD S GS b Dynamic C Input Capacitance 805 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 120 pF oss DS GS C Reverse Transfer Capacitance 85 rss Q Total Gate Charge 914 g Q V = - 20 V, V = - 4.5 V, I = - 4.5 A Gate-Source Charge 2 nC gs DS GS D Q Gate-Drain Charge 3.6 gd R Gate Resistance f = 1 MHz 11.5 18 g t Turn-On Delay Time 813 d(on) t V = - 15 V, R = 15 Rise Time 12 18 r DD L t I - 1 A, V = - 10 V, R = 6 Turn-Off DelayTime 74 110 ns d(off) D GEN g t Fall Time 38 60 f Source-Drain Reverse Recovery Time t 27 45 rr I = 1.7 A, dI/dt = 100 A/s F Body Diode Reverse Recovery Charge Q 17 26 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 T = - 55 C C V = 10 V thru 4 V GS 16 25 C 16 12 125 C 12 3 V 8 8 4 4 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73662 2 S09-0322-Rev. B, 02-Mar-09 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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