Si4830CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.020 at V = 10 V 8.0 LITTLE FOOT Plus Schottky GS Channel-1 30 7.3 PWM Optimized 0.025 at V = 4.5 V 8.0 GS 100 % R Tested 0.020 at V = 10 V 8.0 g GS Channel-2 30 7.3 100 % UIS Tested 0.025 at V = 4.5 V 8.0 GS Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY APPLICATIONS V (V) Notebook Logic dc-to-dc SD a V (V) I (A) DS Diode Forward Voltage F Low Current dc-to-dc D 30 0.51 V at 1.0 A 2.0 1 D 2 SO-8 S /D D 1 2 1 8 1 G D 2 7 1 1 Schottky Diode G S S /D 1 G 2 3 6 1 2 2 G S /D 2 4 5 1 2 Top View S 1 S 2 Ordering Information: Si4830CDY-T1-E3 (Lead (Pb)-free) Si4830CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Channel-1Channel-2Unit Drain-Source Voltage V 30 30 DS V Gate-Source Voltage V 20 20 GS e e T = 25 C C 8.0 8.0 T = 70 C 7.1 7.1 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 7.5 7.5 b, c b, c T = 70 C A 5.8 5.8 I Pulsed Drain Current (10 s Pulse Width) 30 30 A DM T = 25 C 2.6 2.6 C I Source-Drain Current Diode Current S b, c b, c T = 25 C A 1.8 1.8 I Pulsed Source-Drain Current 30 30 SM I 10 10 Single Pulse Avalanche Current AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 55 AS T = 25 C 2.9 2.9 C T = 70 C 1.8 1.8 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2 2 b, c b, c T = 70 C A 1.2 1.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit b, d R t 10 s 52 62.5 52 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 35 43 35 43 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W (Channel-1) and 110 C/W (Channel-2). e. Package limited. Document Number: 68884 www.vishay.com S09-2109-Rev. B, 12-Oct-09 1Si4830CDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Typ. Parameter Symbol Test Conditions Min. Max. Unit Static V = 0 V, I = 1 mA Ch-1 30 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = 1 mA Ch-2 30 GS D V Temperature Coefficient V /T I = 250 A Ch-1 32 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A Ch-1 - 6 GS(th) GS(th) J D V = V , I = 1 mA Ch-1 1 3 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = 1 mA Ch-2 1 3 DS GS D V = 0 V, V = 20 V Ch-1 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V Ch-2 100 DS GS V = 30 V, V = 0 V Ch-1 0.001 DS GS V = 30 V, V = 0 V Ch-2 0.016 0.10 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C Ch-1 0.025 DS GS J V = 30 V, V = 0 V, T = 100 C Ch-2 1.1 10 DS GS J V = 5 V, V = 10 V Ch-1 20 DS GS b I A On-State Drain Current D(on) V = 5 V, V = 10 V Ch-2 20 DS GS V = 10 V, I = 8 A Ch-1 0.0156 0.020 GS D V = 10 V, I = 8 A Ch-2 0.0156 0.020 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A Ch-1 0.019 0.025 GS D V = 4.5 V, I = 5 A Ch-2 0.019 0.025 GS D V = 15 V, I = 8 A Ch-1 29 DS D b g S Forward Transconductance fs V = 15 V, I = 8 A Ch-2 29 DS D a Dynamic Ch-1 950 C Input Capacitance iss Channel-1 Ch-2 950 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 155 C Output Capacitance pF oss Ch-2 185 Channel-2 Ch-1 65 V = 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss Ch-2 65 V = 15 V, V = 10 V, I = 8 A Ch-1 16.5 25 DS GS D V = 15 V, V = 10 V, I = 8 A Ch-2 16.5 25 DS GS D Q Total Gate Charge g Ch-1 7.3 11 Channel-1 Ch-2 7.3 11 nC V = 15 V, V = 4.5 V, I = 8 A DS GS D Ch-1 2.7 Q Gate-Source Charge gs Ch-2 2.7 Channel-2 Ch-1 2.1 V = 15 V, V = 4.5 V, I = 8 A DS GS D Q Gate-Drain Charge gd Ch-2 2.1 Ch-1 0.2 1.2 2.4 R Gate Resistance f = 1 MHz g Ch-2 0.2 1.2 2.4 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 68884 2 S09-2109-Rev. B, 12-Oct-09