Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.041 at V = 10 V 6.5 GS TrenchFET Power MOSFET 60 9.2 nC 0.052 at V = 4.5 V 5.8 GS 175 C Maximum Junction Temperature 100 % R Tested g Compliant to RoHS directive 2002/95/EC SO-8 D D 1 2 S D 1 1 8 1 G D 1 2 7 1 S D 2 3 6 2 G D 2 4 5 2 G G 1 2 Top View S S 1 2 Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free) Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 60 DS V Gate-Source Voltage V 20 GS T = 25 C 6.5 C T = 70 C 5.5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 5.3 a, b T = 70 C 4.4 A A I Pulsed Drain Current 30 DM T = 25 C 3.1 C I Continuous Source Drain Diode Current S a, b T = 25 C 2 A I Avalanche Current 12 AS L = 0 1 mH E Single-Pulse Avalanche Energy 7.2 mJ AS T = 25 C 3.7 C T = 70 C 2.6 C P Maximum Power Dissipation W D a, b T = 25 C 2.4 A a, b T = 70 C A 1.7 Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c R t 10 s 50 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 33 41 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. d. Maximum under Steady State conditions is 110 C/W. Document Number: 73411 www.vishay.com S09-2434-Rev. C, 16-Nov-09 1Si4946BEY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 V DS GS D V Temperature Coefficient V /T 53 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.4 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 5.3 A 0.033 0.041 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.7 A 0.041 0.052 GS D a g V = 15 V, I = 5.3 A 24 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 840 iss Output Capacitance C V = 30 V, V = 0 V, f = 1 MHz 71 pF oss DS GS C Reverse Transfer Capacitance 44 rss V = 30 V, V = 10 V, I = 5.3 A 17 25 DS GS D Total Gate Charge Q g 9.2 12 nC Q Gate-Source Charge V = 30 V, V = 5 V, I = 5.3 A 3.3 gs DS GS D Gate-Drain Charge Q 3.7 gd R Gate Resistance f = 1 MHz 3.1 6.5 9.5 g Turn-On Delay Time t 20 30 d(on) t Rise Time V = 30 V, R = 6.8 120 180 r DD L I 4.4 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 30 45 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 30 V, R = 6.8 12 20 r DD L I 4.4 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 3.1 S C A a I 30 Pulse Diode Forward Current SM V I = 2 A Body Diode Voltage 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 25 50 ns rr Q Body Diode Reverse Recovery Charge 25 50 nC rr I = 4.4 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 18 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73411 2 S09-2434-Rev. C, 16-Nov-09