X-On Electronics has gained recognition as a prominent supplier of SI5933CDC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5933CDC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5933CDC-T1-GE3 Vishay

SI5933CDC-T1-GE3 electronic component of Vishay
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Part No.SI5933CDC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V 3.7A 2.8W
Datasheet: SI5933CDC-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 3000
Multiples : 3000
3000 : USD 0.2147
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Obsolete
   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
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We are delighted to provide the SI5933CDC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5933CDC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si5933CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.144 at V = - 4.5 V - 3.7 GS TrenchFET Power MOSFET 0.180 at V = - 2.5 V 100 % R Tested - 20 - 3.0 4.1 nC GS g Compliant to RoHS Directive 2002/95/EC 0.222 at V = - 1.8 V - 3.0 GS APPLICATIONS 1206-8 ChipFET Load Switch for Portable Devices 1 S S 1 2 S 1 D 1 G 1 D S 1 2 G G Marking Code 1 2 D 2 G 2 DI XXX D Lot Traceability 2 and Date Code Part Code Bottom View D D 1 2 Ordering Information: Si5933CDC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET P-Channel MOSFET Si5933CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 3.7 C T = 70 C - 3.0 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 2.5 b, c T = 70 C A A - 2.0 I Pulsed Drain Current - 10 DM T = 25 C - 2.3 C Continuous Source-Drain Diode Current I S b, c T = 25 C A - 1.1 T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation P W D b, c T = 25 C A 1.3 b, c T = 70 C A 0.8 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R Maximum Junction-to-Ambient 82 99 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 35 45 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 130 C/W. Document Number: 68822 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1Si5933CDC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 19 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.45 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 70 C - 5 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.5 A 0.120 0.144 GS D a R V = - 2.5 V, I = - 2.2 A 0.150 0.180 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 2.0 A 0.185 0.222 GS D a g V = - 10 V, I = - 2.5 A 18 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 276 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 60 pF oss DS GS C Reverse Transfer Capacitance 43 rss V = - 10 V, V = - 5 V, I = - 2.5 A 4.5 6.8 DS GS D Q Total Gate Charge g 4.1 6.2 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 2.5 A 0.6 gs DS GS D Q Gate-Drain Charge 1.0 gd R Gate Resistance f = 1 MHz 1.1 5.5 11 g t Turn-On Delay Time 11 17 d(on) t Rise Time V = - 10 V, R = 5.0 34 51 r DD L I - 2.0 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 22 33 D GEN g d(off) t Fall Time 816 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = - 10 V, R = 5.0 14 21 r DD L I - 2.0 A, V = - 5 V, R = 1 Turn-Off Delay Time t 17 26 D GEN g d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.3 S C A I Pulse Diode Forward Current - 10 SM V I = - 2.0 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 23 35 ns rr Q Body Diode Reverse Recovery Charge 13 20 nC rr I = - 2.0 A, dI/dt = - 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68822 2 S10-0548-Rev. B, 08-Mar-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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