X-On Electronics has gained recognition as a prominent supplier of SI6423DQ-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI6423DQ-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI6423DQ-T1-E3 Vishay

SI6423DQ-T1-E3 electronic component of Vishay
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Part No.SI6423DQ-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
Datasheet: SI6423DQ-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.656 ea
Line Total: USD 1.66 
Availability - 18106
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.8905

18106
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.656
10 : USD 1.3915
100 : USD 1.0511
250 : USD 1.0384
500 : USD 0.8786
1000 : USD 0.8625
3000 : USD 0.8614
6000 : USD 0.8602

2397
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 29
Multiples : 1
29 : USD 1.4267
50 : USD 1.3617
100 : USD 1.2139
200 : USD 1.1683
500 : USD 1.1652
1000 : USD 1.0855
2000 : USD 1.0595

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.3504

   
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We are delighted to provide the SI6423DQ-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI6423DQ-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si6423DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( ) I (A) APPLICATIONS DS DS(on) D Load Switch 0.0085 V = -4.5 V -9.5 GS 0.0106 V = -2.5 V -8.5 -12 GS 0.014 V = -1.8 V -7.5 GS S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 S S 3 6 G D 4 5 Top View D Ordering Information: Si6423DQ Si6423DQ-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage V -12 DS VV Gate-Source Voltage V 8 GS T = 25 C -9.5 -8.2 A aa Continuous Drain CurrentContinuous Drain Current (T(T = 150 = 150 C)C) II JJ DD T = 70 C -8 -6.5 A AA Pulsed Drain Current (10 s Pulse Width) I -30 DM a Continuous Source Current (Diode Conduction) I -1.35 -0.95 S T = 25 C 1.5 1.05 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 70 C 1.0 0.67 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 60 83 aa MiMaximum Junction-to-Ambient J ti t A bi t RR thJA Steady State 100 120 C/WC/W Maximum Junction-to-Foot Steady State R 35 45 thJF Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 72257 www.vishay.com S-31419Rev. A, 07-Jul-03 1Si6423DQ New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = -400 A -0.40 -0.8 V GS(th) DS GS D V = 0 V, V = 8 V Gate-Body Leakage I DS GS 100 nA GSS V = -9.6 V, V = 0 V -1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = -9.6 V, V = 0 V, T = 70 C -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -20 A D(on) DS GS V = -4.5 V, I = -9.5 A 0.0068 0.0085 GS D 0.0085 0.0106 a V = -2.5 V, I = -8.5 A Drain-Source On-State Resistance r GS D DSDS((on)on) 0.0112 0.014 V = -1.8 V, I = -7.5 A GS D a Forward Transconductance g V = -15 V, I = -9.5 A 45 S fs DS D a Diode Forward Voltage V I = -1.3 A, V = 0 V -0.58 -1.1 V SD S GS b Dynamic Total Gate Charge Q 74 110 g Gate-Source Charge Q V = -6 V, V = -5 V, I = -9.5 A 9.0 nC gs DS GS D Gate-Drain Charge Q 19 gd Gate Resistance R 3.6 g Turn-On Delay Time t 50 75 d(on) Rise Time t 75 110 r VV = = --66 VV,, R R = 6 = 6 DDDD LL I -1 A, V = -4.5 V, R = 6 D GEN G Turn-Off Delay Time t 270 400 d(off) ns Fall Time t 200 300 f Source-Drain Reverse Recovery Time t I = -1.3 A, di/dt = 100 A/ s 160 250 rr F Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 V = 5 thru 2 V GS 24 24 1.5 V 18 18 12 12 T = 125 C C 6 6 25 C -55 C 0 0 0 1234 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Document Number: 72257 www.vishay.com S-31419Rev. A, 07-Jul-03 2 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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