X-On Electronics has gained recognition as a prominent supplier of SI5902BDC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5902BDC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5902BDC-T1-GE3 Vishay

SI5902BDC-T1-GE3 electronic component of Vishay
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Part No.SI5902BDC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 30V 4A 3.12W Surface Mount 1206-8 ChipFET™
Datasheet: SI5902BDC-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2075 ea
Line Total: USD 1.21 
Availability - 16817
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1964
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8869
10 : USD 0.7965
25 : USD 0.7886
100 : USD 0.6976
250 : USD 0.6906
500 : USD 0.6343
1000 : USD 0.6335

16817
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2075
10 : USD 0.9016
100 : USD 0.6923
500 : USD 0.5923
1000 : USD 0.5681
3000 : USD 0.5463
24000 : USD 0.5451

1770
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 13
Multiples : 1
13 : USD 0.7965
25 : USD 0.7886
100 : USD 0.6976
250 : USD 0.6906
500 : USD 0.6343
1000 : USD 0.6335

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the SI5902BDC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5902BDC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si5902BDC Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.065 at V = 10 V 4 GS TrenchFET Power MOSFET 30 2 nC a 0.100 at V = 4.5 V Compliant to RoHS Directive 2002/95/EC GS 4 APPLICATIONS Load Switch for Portable Applications 1206-8 ChipFET (Dual) DC/DC Converter 1 D D 1 2 S 1 D G 1 1 D S 1 2 Marking Code D G 2 2 G G 1 2 CE XXX D Lot Traceability 2 and Date Code Part S S 1 2 Code Bottom View Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS a T = 25 C C 4 a T = 85 C C 3.8 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 3.7 b, c T = 85 C A A 2.6 I Pulsed Drain Current 10 DM T = 25 C 2.6 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 1.3 T = 25 C 3.12 C T = 85 C 2.0 C Maximum Power Dissipation P W D b, c T = 25 C A 1.5 b, c T = 85 C A 0.8 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R Maximum Junction-to-Ambient 70 85 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 33 40 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 120 C/W. Document Number: 70415 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1Si5902BDC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 27 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 85 C 5 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.1 A 0.053 0.065 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 1 A 0.081 0.100 GS D a g V = 15 V, I = 3.1 A 5S Forward Transconductance fs DS D b Dynamic C Input Capacitance 220 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 50 pF oss DS GS C Reverse Transfer Capacitance 25 rss V = 15 V, V = 10 V, I = 3.6 A 4.5 7 DS GS D Q Total Gate Charge g 23 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 3.6 A 0.7 gs DS GS D Q Gate-Drain Charge 0.7 gd R Gate Resistance f = 1 MHz 3 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = 15 V, R = 5.8 80 120 r DD L I 2.6 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 12 20 d(off) Fall Time t 25 40 f ns t Turn-On Delay Time 48 d(on) Rise Time t 12 20 V = 15 V, R = 5.8 r DD L I 2.6 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 10 15 d(off) Fall Time t 510 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.6 S C A Pulse Diode Forward Current I 10 SM V I = 2.6 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 50 ns rr Q Body Diode Reverse Recovery Charge 20 40 nC rr I = 2.6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 23 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70415 2 S10-0548-Rev. B, 08-Mar-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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