X-On Electronics has gained recognition as a prominent supplier of SI5904DC-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5904DC-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5904DC-T1-E3 Vishay

SI5904DC-T1-E3 electronic component of Vishay

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Part No.	SI5904DC-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 20V 4.2A 2.1W Low-leakage Schottky barrier rectifier diode in small SMB package.
Datasheet:	SI5904DC-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.4972 ea
Line Total: USD 1491.6

Availability - 0

MOQ: 3000 Multiples: 1
Pack Size: 1

SI5904DC-T1-E3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 3000 Multiples : 1	3000 : USD 0.4972

We are delighted to provide the SI5904DC-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5904DC-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI5904DC-T1-E3 is a dual, low noise and high performance PIN diode from Vishay. It is designed for RF and IF applications and has a low-noise figure of 1 dB at 1 GHz. The device features an integrated temperature compensated inductor, which helps to reduce parasitic resonances and provide consistent performance over a wide temperature range. The device has excellent linearity, making it ideal for low distortion applications. Additionally, it is RoHS compliant and all bonding wires are lead-free.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 3.1 A 3.1 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 75 mOhms 75 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 12 V 12 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.1 W 1.1 W
Mounting Style smd/smt smd/smt
Package / Case CHIP - FET - 8 CHIP - FET - 8
Packaging Reel Reel
Channel Mode enhancement enhancement
Tradename trenchfet trenchfet
Configuration dual dual
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 35 ns 35 ns
Rise Time 35 ns 35 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 19 ns 19 ns