Si7228DN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 f V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.020 at V = 10 V TrenchFET Power MOSFET 26 GS 30 4.1 nC 100 % R Tested g 0.025 at V = 4.5 V 23 GS 100 UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK 1212-8 Synchronous Rectification Notebook System Power S1 POL 3.30 mm 3.30 mm D D 1 1 2 G1 Low Current DC/DC 2 S2 3 G2 4 D1 8 D1 G G 1 2 7 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7228DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 26 C T = 70 C 21 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 8.8 A a, b T = 70 C 7 A A I Pulsed Drain Current 35 DM T = 25 C 19 C Continuous Source-Drain Diode Current I S a, b T = 25 C 2.2 A Single Pulse Avalanche Current I 14 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ AS 9.8 T = 25 C 23 C T = 70 C 14.8 C Maximum Power Dissipation P W D a, b T = 25 C 2.6 A a, b T = 70 C 1.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e Maximum Junction-to-Ambient t 10 s R 38 48 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4.3 5.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 94 C/W. f. Based on T = 25 C. C Document Number: 64806 www.vishay.com S09-0666-Rev. A, 20-Apr-09 1Si7228DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 34 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 12.5V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 20 A D(on) DS GS V = 10 V, I = 8.8 A 0.0165 0.020 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7.8 A 0.0205 0.025 GS D a Forward Transconductance g V = 15 V, I = 8.8 A 20 S fs DS D b Dynamic C Input Capacitance 480 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 115 pF oss DS GS C Reverse Transfer Capacitance 46 rss V = 15 V, V = 10 V, I = 8.8 A 8.5 13 DS GS D Total Gate Charge Q g 4.1 6.2 nC Q Gate-Source Charge 1.5 gs V = 15 V, V = 4.5 V, I = 8.8 A DS GS D Gate-Drain Charge Q 1.3 gd R Gate Resistance f = 1 MHz 0.6 3.2 6.4 g t Turn-On Delay Time 13 20 d(on) t Rise Time V = 15 V, R = 2.1 12 20 r DD L I 7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 12 20 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 510 d(on) t Rise Time V = 15 V, R = 2.1 10 15 r DD L I 7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I Continuous Source-Drain Diode Current T = 25 C 19 S C A I Pulse Diode Forward Current 35 SM V I = 7 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 20 30 ns rr Q Body Diode Reverse Recovery Charge 16 25 nC rr I = 7 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64806 2 S09-0666-Rev. A, 20-Apr-09