X-On Electronics has gained recognition as a prominent supplier of SI7270DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7270DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7270DP-T1-GE3 Vishay

SI7270DP-T1-GE3 electronic component of Vishay
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Part No.SI7270DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 8A 17.8W
Datasheet: SI7270DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.4798
10 : USD 1.2186
100 : USD 0.9351
500 : USD 0.8045
1000 : USD 0.7051
N/A

Obsolete
0
MOQ : 69
Multiples : 1
69 : USD 1.1032
100 : USD 0.9652
N/A

Obsolete
   
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We are delighted to provide the SI7270DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7270DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7270DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 f V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g 0.021 at V = 10 V 8 TrenchFET Power MOSFET GS 30 6.6 PWM Optimized 0.025 at V = 4.5 V 8 GS 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SO-8 Fixed Telecom - Server Synchronous Converter S1 5.15 mm D D 6.15 mm 1 1 2 G1 2 S2 3 G2 4 D1 8 D1 G G 7 1 2 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7270DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS f T = 25 C 8 C f T = 70 C 8 C Continuous Drain Current (T = 150 C) I J D a, b, f T = 25 C 8 A a, b T = 70 C 8 A A Pulsed Drain Current (300 s) I 35 DM f T = 25 C 8 C Source-Drain Current Diode Current I S a, b T = 25 C 3.0 A Single Pulse Avalanche Current I 15 AS L = 0.1 mH Avalanche Energy E 11.2 mJ AS T = 25 C 17.8 C T = 70 C 11.4 C Maximum Power Dissipation P W D a, b T = 25 C 3.6 A a, b T = 70 C 2.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit a, e t 10 s R 28 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.5 7.0 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 80 C/W. f. Package limited. Document Number: 66817 www.vishay.com S10-2010-Rev. A, 06-Sep-10 1New Product Si7270DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T I = 250 A V Temperature Coefficient 34 DS J D DS mV/C V /T I = 250 A V Temperature Coefficient - 5.5 GS(th) J D GS(th) V V = V , I = 250 A Gate Threshold Voltage 1.2 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 85 C 10 DS GS J b I V 5 V, V = 10 V On-State Drain Current 20 A D(on) DS GS V = 10 V, I = 8 A 0.0175 0.021 GS D b Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 6 A 0.0205 0.025 GS D b g V = 10 V, I = 8 A Forward Transconductance 31 S fs DS D a Dynamic Input Capacitance C 900 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 150 pF oss DS GS Reverse Transfer Capacitance C 60 rss V = 15 V, V = 10 V, I = 10 A 14 21 DS GS D Q Total Gate Charge g 6.6 10 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 2.5 gs DS GS D Q Gate-Drain Charge 1.7 gd R Gate Resistance f = 1 MHz 0.3 1.4 2.8 g t Turn-On Delay Time 14 28 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 10 A, V = 4.5 V, R = 1 t 15 30 Turn-Off Delay Time D GEN g d(off) Fall Time t 816 f ns Turn-On Delay Time t 10 20 d(on) Rise Time t V = 15 V, R = 1.5 816 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 18 36 D GEN g d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 8 S C A a I Pulse Diode Forward Current 35 SM V I = 3 A Body Diode Voltage 0.77 1.2 V SD S t Body Diode Reverse Recovery Time 13 26 ns rr Q Body Diode Reverse Recovery Charge 6.5 13 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 5 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66817 2 S10-2010-Rev. A, 06-Sep-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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