X-On Electronics has gained recognition as a prominent supplier of SI7315DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7315DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7315DN-T1-GE3 Vishay

SI7315DN-T1-GE3 electronic component of Vishay
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Part No.SI7315DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -150V .315ohm@-10V -8.9A P-Ch T-FET
Datasheet: SI7315DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.4911 ea
Line Total: USD 1473.3 
Availability - 37830
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
37830
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4911
6000 : USD 0.4702
9000 : USD 0.4655
24000 : USD 0.4608

29
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9211
10 : USD 0.9002
30 : USD 0.8867
100 : USD 0.8733

10198
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.386
10 : USD 0.9504
100 : USD 0.6908
500 : USD 0.5742
1000 : USD 0.5401
3000 : USD 0.5214
6000 : USD 0.5049
9000 : USD 0.5016
24000 : USD 0.5005

37830
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4911
6000 : USD 0.4702
9000 : USD 0.4655
24000 : USD 0.4608

78570
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 3000
6000 : USD 0.8174

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the SI7315DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7315DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si7315DN Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET e V (V) R ( ) Max. Q (Typ.) Low Thermal Resistance PowerPAK DS DS(on) I (A) g D Package with Small Size 0.315 at V = - 10 V - 8.9 GS 100 % R and UIS Tested - 150 15.4 nC g 0.350 at V = - 6 V - 8.7 Material categorization: GS Available For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS S Active Clamp in Intermediate DC/DC S 3.3 mm 3.3 mm 1 S Power Supplies 2 S H-Bridge High Side Switch for Lighting 3 G G 4 Application D Load Switch 8 D 7 D 6 D 5 D Bottom View P-Channel MOSFET Ordering Information: Si7315DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 150 DS V V Gate-Source Voltage 30 GS T = 25 C - 8.9 C T = 70 C - 7.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 2.4 A a, b T = 70 C - 1.9 A A Pulsed Drain Current (t = 100 s) I - 10 DM f T = 25 C - 18 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 3.2 A I 14 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 9.8 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.8 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Based on T = 25 C. C f. Package limited. Document Number: 62895 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1816-Rev. A, 12-Aug-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7315DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b t 10 s R 26 33 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 81 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 150 V DS GS D V Temperature Coefficient V /T - 143 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 6.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 30 V 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 8 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 2.4 A 0.262 0.315 GS D a R Drain-Source On-State Resistance DS(on) V = - 7.5 V, I = - 2.3 A 0.275 0.350 GS D a g V = - 15 V, I = 2.4 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 880 iss C V = - 75 V, V = 0 V, f = 1 MHz Output Capacitance 50 pF oss DS GS C Reverse Transfer Capacitance 35 rss V = - 75 V, V = - 10 V, I = - 2.4 A 19.5 30 DS GS D Q Total Gate Charge g 15.4 23 nC Q V = - 75 V, V = - 7.5 V, I = - 2.4 A Gate-Source Charge 4.8 gs DS GS D Q Gate-Drain Charge 5.3 gd R Gate Resistance f = 1 MHz 1.1 5.4 10.8 g t Turn-On Delay Time 816 d(on) t V = - 75 V, R = 39.5 Rise Time 918 r DD L ns t I - 1.9 A, V = - 10 V, R = 1 Turn-Off DelayTime D GEN g 23 35 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 18 S C A a I - 10 Pulse Diode Forward Current SM V I = - 1.9 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 43 63 ns rr Q Body Diode Reverse Recovery Charge 89 134 nC rr I = - 1.9 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 37 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62895 2 S13-1816-Rev. A, 12-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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