Si7315DN Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET e V (V) R ( ) Max. Q (Typ.) Low Thermal Resistance PowerPAK DS DS(on) I (A) g D Package with Small Size 0.315 at V = - 10 V - 8.9 GS 100 % R and UIS Tested - 150 15.4 nC g 0.350 at V = - 6 V - 8.7 Material categorization: GS Available For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS S Active Clamp in Intermediate DC/DC S 3.3 mm 3.3 mm 1 S Power Supplies 2 S H-Bridge High Side Switch for Lighting 3 G G 4 Application D Load Switch 8 D 7 D 6 D 5 D Bottom View P-Channel MOSFET Ordering Information: Si7315DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 150 DS V V Gate-Source Voltage 30 GS T = 25 C - 8.9 C T = 70 C - 7.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 2.4 A a, b T = 70 C - 1.9 A A Pulsed Drain Current (t = 100 s) I - 10 DM f T = 25 C - 18 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 3.2 A I 14 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 9.8 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.8 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Based on T = 25 C. C f. Package limited. Document Number: 62895 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1816-Rev. A, 12-Aug-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7315DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b t 10 s R 26 33 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 81 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 150 V DS GS D V Temperature Coefficient V /T - 143 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 6.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 30 V 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 8 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 2.4 A 0.262 0.315 GS D a R Drain-Source On-State Resistance DS(on) V = - 7.5 V, I = - 2.3 A 0.275 0.350 GS D a g V = - 15 V, I = 2.4 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 880 iss C V = - 75 V, V = 0 V, f = 1 MHz Output Capacitance 50 pF oss DS GS C Reverse Transfer Capacitance 35 rss V = - 75 V, V = - 10 V, I = - 2.4 A 19.5 30 DS GS D Q Total Gate Charge g 15.4 23 nC Q V = - 75 V, V = - 7.5 V, I = - 2.4 A Gate-Source Charge 4.8 gs DS GS D Q Gate-Drain Charge 5.3 gd R Gate Resistance f = 1 MHz 1.1 5.4 10.8 g t Turn-On Delay Time 816 d(on) t V = - 75 V, R = 39.5 Rise Time 918 r DD L ns t I - 1.9 A, V = - 10 V, R = 1 Turn-Off DelayTime D GEN g 23 35 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 18 S C A a I - 10 Pulse Diode Forward Current SM V I = - 1.9 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 43 63 ns rr Q Body Diode Reverse Recovery Charge 89 134 nC rr I = - 1.9 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 37 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62895 2 S13-1816-Rev. A, 12-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000