X-On Electronics has gained recognition as a prominent supplier of SI7465DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7465DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7465DP-T1-E3 Vishay

SI7465DP-T1-E3 electronic component of Vishay
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Part No.SI7465DP-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 60 V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8
Datasheet: SI7465DP-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.375 ea
Line Total: USD 1.38 
Availability - 148457
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6282
6000 : USD 0.6039
9000 : USD 0.6031

761
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 2.3409
10 : USD 1.4984
25 : USD 1.4836
100 : USD 0.9965
250 : USD 0.9863
500 : USD 0.663

14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.598
6000 : USD 0.598
9000 : USD 0.598

2672
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2213
10 : USD 1.0973
30 : USD 1.0285
100 : USD 0.9503
500 : USD 0.9161
1000 : USD 0.9007

148457
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.375
10 : USD 0.9504
100 : USD 0.6886
500 : USD 0.5918
1000 : USD 0.5566
3000 : USD 0.5346
6000 : USD 0.5225
24000 : USD 0.5126

2491
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.568
10 : USD 1.288
17 : USD 1.008
47 : USD 0.952
500 : USD 0.938

8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6115

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6144
6000 : USD 0.5947
9000 : USD 0.5923

11640
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6282
6000 : USD 0.6039
9000 : USD 0.6031

761
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 12
Multiples : 1
12 : USD 0.663

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI7465DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7465DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Si7465DP www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( )I (A) Q (TYP.) DS DS(on) D g New Low Thermal Resistance PowerPAK 0.064 at V = -10 V -5 GS -60 26 Package with Low 1.07 mm Profile 0.080 at V = -4.5 V -4.5 GS Material categorization: Available For definitions of compliance please see www.vishay.com/doc 99912 PowerP AK SO-8 S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View Ordering Information: P-Channel MOSFET Si7465DP-T1-E3 (Lead (Pb)-free) D Si7465DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -5 -3.2 A a Continuous Drain Current (T = 150C) I J D T = 70 C -4 -2.6 A Pulsed Drain Current I -25 A DM a Continuous Source Current (Diode Conduction) I -2.9 -1.2 S Avalanche Current I 22 AS L = 0.1 mH Single Pulse Avalanche Energy E 24.2 mJ AS T = 25 C 3.5 1.5 A a Maximum Power Dissipation P W D T = 70 C 2.2 0.94 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C b,c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 10 s 27 36 a Maximum Junction-to-Ambient R thJA Steady State 60 85 C/W Maximum Junction-to-Case (Drain) Steady State R 3.3 4.3 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. S13-2263-Rev. D, 04-Nov-13 Document Number: 73113 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si7465DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Gate Threshold Voltage V V = V , I = -250 A -1 -3 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = -60 V, V = 0 V -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -60 V, V = 0 V, T = 70 C -10 DS GS J a On-State Drain Current I V -5 V, V = -10 V -25 A D(on) DS GS V = -10 V, I = -5 A 0.051 0.064 GS D a Drain-Source On-State Resistance R DS(on) V = -4.5 V, I = -4.5 A 0.064 0.080 GS D a Forward Transconductance g V = -15 V, I = -5 A 16 S fs DS D a Diode Forward Voltage V I = -2.9 A, V = 0 V -0.8 -1.2 V SD S GS b Dynamic Total Gate Charge Q 26 40 g Gate-Source Charge Q V = -30 V, V = -10 V, I = -5 A 4.5 nC gs DS GS D Gate-Drain Charge Q 7 gd Gate Resistance R 7 g Turn-On Delay Time t 815 d(on) Rise Time t 915 r V = -30 V, R = 30 DD L I -1 A, V = 10 V, R = 6 Turn-Off Delay Time t 65D GEN g 100 ns d(off) Fall Time t 30 45 f Source-Drain Reverse Recovery Time t I = -5 A, dI/dt = 100 A/s 41 70 rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 30 30 V = 10 V thru 5 V GS 4 V 25 25 20 20 15 15 10 10 T = 125 C C 3 V 5 5 25 C - 55 C 0 0 0 2468 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics S13-2263-Rev. D, 04-Nov-13 Document Number: 73113 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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