SI7478DP-T1-E3 Vishay

Si7478DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0075 at V = 10 V 20 GS TrenchFET Power MOSFET 60 New Low Thermal Resistance PowerPAK 0.0088 at V = 4.5 V 18.5 GS Package with Low 1.07 mm Profile 100 % R Tested g PowerP AK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 D G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7478DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7478DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 60 DS V Gate-Source Voltage V 20 GS T = 25 C 20 15 A a I Continuous Drain Current (T = 150C) D J T = 70 C 16 12 A Pulsed Drain Current I 60 A DM a Continuous Source Current (Diode Conduction) I 4.5 1.6 S I Avalanche Current 35 AS Avalanche Energy E 61 mJ AS T = 25 C 5.4 1.9 A a P Maximum Power Dissipation W D T = 70 C 3.4 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State 52 65 C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.3 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile ( www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72913 www.vishay.com S09-0271-Rev. D, 16-Feb-09 1Si7478DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 60 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V On-State Drain Current 40 A D(on) DS GS V = 10 V, I = 20 A 0.006 0.0075 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 18.5 A 0.007 0.0088 GS D a Forward Transconductance g V = 15 V, I = 20 A 63 S fs DS D a V I = 4.5 A, V = 0 V Diode Forward Voltage 0.76 1.2 V SD S GS b Dynamic Total Gate Charge Q 105 160 g Q V = 30 V, V = 10 V, I = 20 A Gate-Source Charge 22 nC gs DS GS D Gate-Drain Charge Q 19 gd R Gate Resistance 0.5 1.0 1.5 g Turn-On Delay Time t 25 40 d(on) t Rise Time V = 30 V, R = 30 20 30 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 115 175 ns d(off) t Fall Time 45 70 f t I = 4.5 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 41 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 V thru 4 V GS 50 50 40 40 30 30 T 20 20 = 125 C C 3 V 10 10 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72913 2 S09-0271-Rev. D, 16-Feb-09 I - Drain Current (A) D I - Drain Current (A) D