New Product Si7788DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0031 at V = 10 V 50 GS 100 % R and UIS Tested COMPLIANT g 30 37 nC 0.0041 at V = 4.5 V 50 GS APPLICATIONS PowerPAK SO-8 Low-Side DC/DC Conversion - Notebook - Gaming D S 6.15 mm 5.15 mm 1 S Vcore 2 S 3 G 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: Si7788DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS e T = 25 C C 50 e T = 70 C 50 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 29.5 b, c T = 70 C A 23.5 A Pulsed Drain Current I 70 DM e T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.7 Single Pulse Avalanche Current I 40 AS L = 0.1 mH E mJ Avalanche Energy 80 AS T = 25 C 69 C T = 70 C 44.4 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C f, g 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 10 s 19 24 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 65 C/W. e. Package limited. f. See Solder Profile (New Product Si7788DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 37 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 7.3 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0026 0.0031 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0032 0.0041 GS D a g V = 15 V, I = 15 A 85 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 5370 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 690 pF oss DS GS Reverse Transfer Capacitance C 330 rss V = 15 V, V = 10 V, I = 10 A 82 125 DS GS D Q Total Gate Charge g 37 56 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 12.6 gs DS GS D Q Gate-Drain Charge 9.8 gd Gate Resistance R f = 1 MHz 0.2 0.95 1.9 g t Turn-On Delay Time 44 70 d(on) Rise Time t 21 35 r V = 15 V, R = 3 DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 45 70 d(off) t Fall Time 18 30 f ns t Turn-On Delay Time 15 30 d(on) t Rise Time V = 15 V, R = 3 10 20 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 43 70 d(off) t Fall Time 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 2.7 A 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 38 60 ns rr Q Body Diode Reverse Recovery Charge 36 60 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69976 2 S-81196-Rev. B, 26-May-08