Si7858ADP Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET RoHS 0.0026 at V = 4.5 V 29 GS COMPLIANT New Low Thermal Resistance PowerPAK 12 54 0.0037 at V = 2.5 V 23 Package with Low 1.07 mm Profile GS 100 % R Tested g PowerP AK SO-8 APPLICATIONS Low Output Voltage, High Current Synchronous Rectifiers S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D D 8 D 7 D 6 D 5 G Bottom V iew S Ordering Information: Si7858ADP-T1-E3 (Lead (Pb)-free) Si7858ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 12 DS V Gate-Source Voltage V 8 GS T = 25 C 29 20 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 23 16 A A Pulsed Drain Current (10 s Pulse Width) I 60 DM a I 4.5 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 5.4 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.4 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State C/W 50 65 R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile ( Si7858ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 0.95 1.5 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 29 A 0.0020 0.0026 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 23 A 0.0029 0.0037 GS D a g V = 6 V, I = 29 A 130 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.75 1.1 V Diode Forward Voltage SD S GS b Dynamic Input Capacitance C 5700 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 2680 pF oss DS SS Reverse Transfer Capacitance C 1280 rss Q Total Gate Charge 54 80 g Gate-Source Charge Q V = 6 V, V = 4.5 V, I = 29 A 10 nC gs DS GS D Q Gate-Drain Charge 16 gd Gate Resistance R 0.5 1.2 2.0 g t Turn-On Delay Time 40 60 d(on) Rise Time t 40 60 r V = 6 V, R = 6 DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 140 210 ns d(off) t Fall Time 70 100 f t I = 2.9 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 50 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 5 thru 2 V GS 50 50 40 40 30 30 T = 125 C C 20 20 25 C 10 10 1.5 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 73164 2 S-80440-Rev. C, 03-Mar-08 I - Drain Current (A) D I - Drain Current (A) D