Si7882DP Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free available V (V) R ()I (A) DS DS(on) D Available TrenchFET Power MOSFET 0.0055 at V = 4.5 V 22 GS RoHS* New Low Thermal Resistance PowerPAK 12 COMPLIANT 0.008 at V = 2.5 V 18 Package with Low 1.07 mm Profile GS PWM Optimized for High Efficiency 100 % R Tested g PowerP AK SO-8 APPLICATIONS Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down S 6.15 mm 5.15 mm 1 - Q Optimized for 500 kHz Operation S g 2 S Synchronous Buck, Shoot-Thru Resistant 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7882DP-T1 S Si7882DP-T1-E3 (Lead (Pb)-free) Si7882DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 12 DS V V Gate-Source Voltage 8 GS T = 25 C 22 13 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 18 11 A I Pulsed Drain Current 50 A DM a I 4.1 1.6 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Energy I 12 AS L = 0.1 mH Avalanche Energy E 7.2 mJ AS T = 25 C 51.9 A a P W Maximum Power Dissipation D T = 70 C 3.2 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 20 25 a R Maximum Junction-to-Ambient (MOSFET) thJA Steady State 55 65 C/W Maximum Junction-to-Case (Drain) Steady State R 2.0 2.6 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7882DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.4 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 12 V, V = 0 V, T = 70 C 5 DS GS J a I V 5 V, V = 4.5 V 40 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 17 A 0.0045 0.0055 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 14 A 0.0065 0.008 GS D a g V = 6 V, I = 17 A 80 S Forward Transconductance fs DS D a V I = 2.7 A, V = 0 V 0.70 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 21 30 g Q V = 6 V, V = 4.5 V, I = 17 A Gate-Source Charge 4.6 nC gs DS GS D Gate-Drain Charge Q 3.5 gd R Gate Resistance 0.8 3.5 g Turn-On Delay Time t 28 42 d(on) t Rise Time V = 6 V, R = 6 32 48 r DD L I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 82 123 ns D GEN G d(off) t Fall Time 35 53 f Source-Drain Reverse Recovery Time t I = 2.7 A, di/dt = 100 A/s 60 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 thru 2.5 V GS 40 40 30 30 20 20 T = 125 C C 10 10 25 C - 55 C 1.5 V 0 0 012345 0.0 0.5 1.0 1.5 2.0 22.5.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source V oltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71858 2 S-80439-Rev. G, 03-Mar-08 2 V I - Drain Current (A) D I - Drain Current (A) D