X-On Electronics has gained recognition as a prominent supplier of SI7898DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7898DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7898DP-T1-E3 Vishay

SI7898DP-T1-E3 electronic component of Vishay
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Part No.SI7898DP-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Datasheet: SI7898DP-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.4475 ea
Line Total: USD 1342.5 
Availability - 5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
213
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4581
10 : USD 1.2632
25 : USD 1.2506
100 : USD 1.0295

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4475

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.923

46694
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.562
10 : USD 1.254
100 : USD 0.9768
250 : USD 0.9658
500 : USD 0.8514
1000 : USD 0.8437
3000 : USD 0.8107

   
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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Typical Turn-Off Delay Time
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We are delighted to provide the SI7898DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7898DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7898DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.085 at V = 10 V 4.8 GS TrenchFET Power MOSFETs 150 for Fast Switching 0.095 at V = 6.0 V 4.5 GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized PowerP AK SO-8 100 % R Tested g APPLICATIONS S 6.15 mm 5.15 mm DC/DC Power Supply Primary Side Switch 1 S 2 S Industrial Motor Drives 3 G D 4 D 8 D 7 D 6 D G 5 Bottom V iew S Ordering Information: Si7898DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7898DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS T = 25 C 4.8 3.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.8 2.4 A I Pulsed Drain Current 25 A DM Avalanche Current L = 0.1 mH I 10 AS a I 4.1 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 5.0 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.2 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 20 25 a R Maximum Junction-to-Ambient thJA Steady State 52 65 C/W Maximum Junction-to-Case (Drain) Steady State R 2.1 2.6 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71873 www.vishay.com S09-0227-Rev. D, 09-Feb-09 1Si7898DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Condition Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.0 4.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 150 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 25 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.5 A 0.068 0.085 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 3.0 A 0.076 0.095 GS D a g V = 15 V, I = 5 A 15 S Forward Transconductance fs DS D a V I = 2.5 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 17 21 g Q V = 75 V, V = 10 V, I = 3.5 A Gate-Source Charge 3.2 nC gs DS GS D Gate-Drain Charge Q 6.0 gd R Gate Resistance 0.50.852.5 g Turn-On Delay Time t 9.0 14 d(on) t Rise Time V = 75 V, R = 21 10 15 r DD L I 3.5 A, V = 10 V, R = 6 Turn-Off Delay Time t 24 35 D GEN g d(off) ns t Fall Time 17 25 f Source-Drain Reverse Recovery t I = 2.5 A, dI/dt = 100 A/s 45 70 rr F Time Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 25 V = 10 V thru 6 V GS 20 20 15 15 5 V 10 10 T = 125 C C 5 5 25 C 3, 4 V - 55 C 0 0 02468 10 0123456 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71873 2 S09-0227-Rev. D, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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