Si7856ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available TrenchFET Power MOSFET 0.0037 at V = 10 V 25 GS RoHS* Optimized for Low Side Synchronous 30 39 COMPLIANT 0.0048 at V = 4.5 V 23 Rectifier Operation GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested PowerPAK SO-8 g APPLICATIONS S 6.15 mm DC/DC Converters 5.15 mm 1 S 2 Synchronous Rectifiers S 3 G 4 D D 8 D 7 D 6 D 5 G Bottom View Ordering Information: Si7856ADP-T1 S Si7856ADP-T1-E3 (Lead (Pb)-free) Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 25 15 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 20 12 A A Pulsed Drain Current (10 s Pulse Width) I 60 DM a I 4.5 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 5.4 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.4 1.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State C/W 50 65 R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile ( Si7856ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 25 A 0.0029 0.0037 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 19 A 0.0036 0.0048 GS D a g V = 15 V, I = 25 A 95 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.7 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 39 55 g Q V = 15 V, V = 4.5 V, I = 25 A Gate-Source Charge 13.5 nC gs DS GS D Gate-Drain Charge Q 11.5 gd R Gate Resistance 0.5 1.0 1.5 g Turn-On Delay Time t 21 35 d(on) t Rise Time V = 15 V, R = 15 15 25 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 100 150 ns D GEN G d(off) t Fall Time 30 45 f Source-Drain Reverse Recovery Time t I = 2.9 A, di/dt = 100 A/s 50 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 thru 4 V GS 50 50 40 40 30 30 20 20 3 V T = 125 C C 10 10 25 C - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73157 2 S-80438-Rev. C, 03-Mar-08 I - Drain Current (A) D I - Drain Current (A) D