X-On Electronics has gained recognition as a prominent supplier of SIA449DJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA449DJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA449DJ-T1-GE3 Vishay

SIA449DJ-T1-GE3 electronic component of Vishay
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Part No.SIA449DJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V 20mOhm@10V 12A P-Ch G-III
Datasheet: SIA449DJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4653 ea
Line Total: USD 0.47 
Availability - 6379
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1920
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5536
10 : USD 0.4711
100 : USD 0.3365
500 : USD 0.2566
1000 : USD 0.2156
3000 : USD 0.1814
6000 : USD 0.1765
9000 : USD 0.1658
15000 : USD 0.1595
21000 : USD 0.1557

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1495
6000 : USD 0.1495
12000 : USD 0.1495
15000 : USD 0.1495
45000 : USD 0.1495

6379
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.3168
100 : USD 0.2222
500 : USD 0.1969
1000 : USD 0.1672
3000 : USD 0.1485
9000 : USD 0.143
24000 : USD 0.1397
45000 : USD 0.1375

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIA449DJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA449DJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiA449DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () (Max.) I (A) Q (Typ.) Thermally Enhanced PowerPAK SC-70 Package DS DS(on) D g a - Small Footprint Area 0.020 at V = - 10 V - 12 GS - Low On-Resistance a - 30 0.024 at V = - 4.5 V - 12 23.1 nC GS 100 % R Tested g a 0.038 at V = - 2.5 V - 12 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK SC-70-6L-Single APPLICATIONS 1 Providing low voltage drop in D S 2 Smart Phones, Tablet PCs, D Mobile Computing: 3 - Power Management G D - Charger Switches 6 G - Load Switches D S 5 - DC/DC Converters 2.05 mm S 2.05 mm 4 Marking Code BWX Ordering Information: Part code SiA449DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D X X X Lot Traceability and Date code P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 12 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 10.4 A b, c T = 70 C A - 8.3 A Pulsed Drain Current (t = 300 s) I - 30 DM a T = 25 C - 12 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 62644 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1993-Rev. B, 23-Sep-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA449DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 22 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 10 A D(on) DS GS V = - 10 V, I = - 6 A 0.0155 0.0200 GS D a Drain-Source On-State Resistance R V = - 4.5 V, I = - 5 A 0.0185 0.0240 DS(on) GS D V = - 2.5 V, I = - 2 A 0.0264 0.0380 GS D a Forward Transconductance g V = - 15 V, I = - 6 A 31 S fs DS D b Dynamic Input Capacitance C 2140 iss Output Capacitance C V = - 15 V, V = 0 V, f = 1 MHz 168 pF oss DS GS Reverse Transfer Capacitance C 155 rss V = - 15 V, V = - 10 V, I = - 10.4 A 48 72 DS GS D Total Gate Charge Q g 23.1 35 nC Gate-Source Charge Q V = - 15 V, V = - 4.5 V, I = - 10.4 A 2.5 gs DS GS D Gate-Drain Charge Q 6.2 gd Gate Resistance R f = 1 MHz 0.6 3.3 6.6 g Turn-On Delay Time t 816 d(on) Rise Time t 10 20 V = - 15 V, R = 1.8 r DD L I - 8.3 A, V = - 10 V, R = 1 Turn-Off Delay Time t 39D GEN g 60 d(off) Fall Time t 816 f ns 26 40 Turn-On Delay Time t d(on) Rise Time t 28 42 r V = - 15 V, R = 1.8 DD L I - 8.3 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 44D GEN g 66 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 12 S C A Pulse Diode Forward Current I - 30 SM Body Diode Voltage V I = - 8.3 A, V = 0 - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 19 30 ns rr Body Diode Reverse Recovery Charge Q 12 20 nC rr I = - 8.3 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 12 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62644 2 S13-1993-Rev. B, 23-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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