New Product SiA450DJ Vishay Siliconix N-Channel 240-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET 2.9 at V = 10 V 1.52 GS New Thermally Enhanced PowerPAK RoHS 240 2.95 at V = 4.5 V 1.5 2.54 nC GS COMPLIANT SC-70 Package 3.5 at V = 2.5 V 1.44 GS - Small Footprint Area - Low On-Resistance APPLICATIONS PowerPAK SC-70-6L-Single Boost Converter for Portable Devices D 1 D Marking Code 2 D A D X 3 Part code G X X X D G 6 Lot Traceability S D and Date code 5 S 2.05 mm 2.05 mm 4 S Ordering Information: N-Channel MOSFET SiA450DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 240 DS V Gate-Source Voltage V 20 GS T = 25 C 1.52 C T = 70 C 1.21 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 0.70 A a, b T = 70 C A 0.56 A Pulsed Drain Current I 1.5 DM T = 25 C 12.8 C I Continuous Source-Drain Diode Current S a, b T = 25 C 2.74 A T = 25 C 15 C T = 70 C 9.8 C P Maximum Power Dissipation W D a, b T = 25 C 3.3 A a, b T = 70 C 2.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e t 5 s R 30 38 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 6.5 8.1 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 5 s. c. See Solder Profile (New Product SiA450DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage 240 V DS GS D V Temperature Coefficient V /T 247.4 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.22 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage 0.8 2.4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 240 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 240 V, V = 0 V, T = 55 C - 10 DS GS J a I V 10 V, V = 10 V 1.5 A On-State Drain Current D(on) DS GS V = 10 V, I = 0.70 A 2.4 2.9 GS D a R V = 4.5 V, I = 0.65 A 2.46 2.95 Drain-Source On-State Resistance DS(on) GS D V = 2.5 V, I = 0.50 A 2.85 3.5 GS D a g V = 120 V, I = 0.70 A 3.14 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 167 iss C V = 120 V, V = 0 V, f = 1 MHz Output Capacitance 10 pF oss DS GS C Reverse Transfer Capacitance 3.4 rss V = 120 V, V = 10 V, I = 0.70 A 4.69 7.035 DS GS D Q Total Gate Charge g 2.54 3.81 nC Q Gate-Source Charge V = 120 V, V = 4.5 V, I = 0.70 A 0.58 gs DS GS D Q Gate-Drain Charge 1.14 gd R Gate Resistance f = 1 MHz 2 g t Turn-On Delay Time 13.7 21 d(on) t Rise Time V = 120 V, R = 200 22 33 r DD L I 0.60 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 23 35 D GEN g d(off) t Fall Time 19 29 f ns Turn-On Delay Time t 4.5 6.75 d(on) t Rise Time V = 120 V, R = 184 11 16.5 r DD L I 0.70 A, V = 10 V, R = 1 Turn-Off Delay Time t 12 18 D GEN g d(off) t Fall Time 15 22.5 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I 2.7 S C A I Pulse Diode Forward Current 12.8 SM V I = 0.5 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 50.2 75.3 ns rr Q Body Diode Reverse Recovery Charge 68 102 nC rr I = 0.5 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 25 a ns t Reverse Recovery Rise Time 25.2 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73603 2 S-80436-Rev. C, 03-Mar-08