X-On Electronics has gained recognition as a prominent supplier of SIA453EDJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA453EDJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA453EDJ-T1-GE3 Vishay

SIA453EDJ-T1-GE3 electronic component of Vishay
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Part No.SIA453EDJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V .0185ohm@-10V -24A P-Ch T-FET
Datasheet: SIA453EDJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.2665
10 : USD 0.2385
25 : USD 0.2378
50 : USD 0.2242
100 : USD 0.2149
250 : USD 0.2058
500 : USD 0.2017
1000 : USD 0.2017
3000 : USD 0.2017
N/A

Obsolete
0

Multiples : 6000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5984
10 : USD 0.6727
100 : USD 0.3672
500 : USD 0.31
1000 : USD 0.2463
3000 : USD 0.2268
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SIA453EDJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA453EDJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiA453EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) (Max.) I (A) Q (Typ.) DS DS(on) D g Thermally Enhanced PowerPAK SC-70 Package 0.0185 at V = - 10 V - 24 GS - Small Footprint Area 0.0235 at V = - 4.5 V - 21 GS - Low On-Resistance - 30 21 nC 0.0260 at V = - 3.7 V - 20 100 % R and UIS Tested GS g Typical ESD Protection: 4000 V (HBM) 0.0377 at V = - 2.5 V - 10 GS Material categorization: For definitions of compliance PowerPAK SC-70-6L-Single please see www.vishay.com/doc 99912 APPLICATIONS S 1 D Portable Devices such as Smart Phones, 2 Tablet PCs and Mobile Computing D - Load Switch 3 - Power Management G D - Input Protection Switch (over 6 G voltage, reverse voltage) S D 5 Marking Code S 2.05 mm 2.05 mm 4 B 2 X Part code D Ordering Information: X X X Lot Traceability P-Channel MOSFET SiA453EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) and Date code ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 12 GS T = 25 C - 24 C T = 70 C - 19 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 10 A b, c T = 70 C - 8 A A Pulsed Drain Current (t = 100 s) I - 80 DM T = 25 C - 16 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A Single Avalanche Current I - 10 AS L = 0.1 mH Single Avalanche Energy E 5mJ AS T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 50 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. S13-1271-Rev. A, 27-May-13 Document Number: 62864 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiA453EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 21 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.1 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.4 V GS(th) DS GS D V = 0 V, V = 12 V 4 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V 0.5 DS GS A V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 10 A D(on) DS GS V = - 10 V, I = - 5 A 0.0150 0.0185 GS D V = - 4.5 V, I = - 5 A 0.0185 0.0235 GS D a Drain-Source On-State Resistance R DS(on) V = - 3.7 V, I = - 5 A 0.0205 0.0260 GS D V = - 2.5 V, I = - 2 A 0.0290 0.0377 GS D a Forward Transconductance g V = - 15 V, I = - 5 A 22 S fs GS D b Dynamic Input Capacitance C 1900 iss Output Capacitance C 160V = - 15 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 145 rss V = - 15 V, V = - 10 V, I = - 11 A 44 66 DS GS D Total Gate Charge Q g 21 32 nC Gate-Source Charge Q 3.9V = - 15 V, V = - 4.5 V, I = - 11 A gs DS GS D Gate-Drain Charge Q 5.9 gd Gate Resistance R f = 1 MHz 1.8 9 18 g Turn-On Delay Time t 25 50 d(on) Rise Time t 45 90 r V = - 15 V, R = 1.7 DD L I - 9 A, V = - 4.5 V, R = 1 D GEN g Turn-Off Delay Time t 65130 d(off) Fall Time t 2855 f ns Turn-On Delay Time t 10 20 d(on) Rise Time t 510 r V = - 15 V, R = 1.7 DD L I - 9 A, V = - 10 V, R = 1 D GEN g Turn-Off Delay Time t 90180 d(off) Fall Time t 2550 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 16 S C A Pulse Diode Forward Current (t = 100 s) I - 80 SM Body Diode Voltage V I = - 9 A, V = 0 V - 0.85 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 22 45 ns rr Body Diode Reverse Recovery Charge Q 20 40 nC rr I = - 9 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16 a ns Reverse Recovery Rise Time t 6 b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1271-Rev. A, 27-May-13 Document Number: 62864 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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