New Product SiA461DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) Max. Q (Typ.) Thermally Enhanced PowerPAK SC-70 Package I (A) DS DS(on) g D - Small Footprint Area 0.033 at V = - 4.5 V - 12 GS - Low On-Resistance 0.042 at V = - 2.5 V Material categorization: - 20 - 12 18 nC GS For definitions of compliance please see 0.055 at V = - 1.8 V - 12 GS www.vishay.com/doc 99912 APPLICATIONS Smart Phones, Tablet PCs, Mobile Computing PowerPAK SC-70-6L-Single - Battery Switch - Charger Switch 1 - Load Switch D 2 (4) S D 3 G Marking Code D 6 B V X (3) G S D 5 Part code X X X X S 2.05 mm 2.05 mm Lot Traceability 4 and Date code (1, 2, 5, 6) D Ordering Information: P-Channel MOSFET SiA461DJ-T1-GE3 (Lead (Pb)-free and Halogen free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit - 20 Drain-Source Voltage V DS V V 8 Gate-Source Voltage GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 8.3 b, c T = 70 C A A - 6.6 I Pulsed Drain Current (t = 300 s) - 20 DM T = 25 C a C - 12 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 2.8 T = 25 C 17.9 C T = 70 C 11.4 C Maximum Power Dissipation P W D b, c T = 25 C A 3.4 b, c T = 70 C A 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 29 37 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Case (Drain) 5.5 7 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 63838 For more information please contact: pmostechsupport vishay.com www.vishay.com S12-0539-Rev. A, 12-Mar-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA461DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 18 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V - 4.5 V, I = - 5.2 A 0.025 0.033 GS D a R V - 2.5 V, I = - 4.8 A 0.030 0.042 Drain-Source On-State Resistance DS(on) GS D V - 1.8 V, I = - 2 A 0.040 0.055 GS D a g V = - 6 V, I = - 5.2 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1300 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 210 pF oss DS GS C Reverse Transfer Capacitance 180 rss V = - 10 V, V = - 8 V, I = - 5.2 A 30 45 DS GS D Total Gate Charge Q g 18 27 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 5.2 A 2.1 gs DS GS D Q Gate-Drain Charge 4.8 gd R Gate Resistance f = 1 MHz 6 g Turn-On Delay Time t 20 30 d(on) t Rise Time V = - 10 V, R = 2.4 22 35 r DD L I - 4.2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 50 75 D GEN g d(off) t Fall Time 20 30 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = - 10 V, R = 2.4 12 25 r DD L I - 4.2 A, V = - 8 V, R = 1 t Turn-Off Delay Time 50 75 d(off) D GEN g t Fall Time 15 25 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A a I - 20 Pulse Diode Forward Current SM Body Diode Voltage V I = - 4.2 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 45 70 ns rr Q Body Diode Reverse Recovery Charge 40 60 nC rr I = - 4.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 23 a ns t Reverse Recovery Rise Time 22 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For more information please contact: pmostechsupport vishay.com Document Number: 63838 2 S12-0539-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000