X-On Electronics has gained recognition as a prominent supplier of SIA477EDJT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA477EDJT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA477EDJT-T1-GE3 Vishay

SIA477EDJT-T1-GE3 electronic component of Vishay
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Part No.SIA477EDJT-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L
Datasheet: SIA477EDJT-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5244 ea
Line Total: USD 0.52 
Availability - 21932
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
21932
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5244
10 : USD 0.36
100 : USD 0.2507
500 : USD 0.2024
1000 : USD 0.1875
3000 : USD 0.1564
9000 : USD 0.1495

5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 6000
Multiples : 6000
6000 : USD 0.1854

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIA477EDJT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA477EDJT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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2.02.05 mm5 mm SiA477EDJT www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES Thin PowerPAK SC-70-6L Single TrenchFET Gen III p-channel power MOSFET D D 6 Thermally enhanced PowerPAK SC-70 package S 5 - Small footprint area 4 - Low on-resistance 0.6 mm 100 % R tested g R rating at V = -1.8 V DS(on) GS S 1 7 2 D Built in ESD protection with Zener diode 3 D Typical ESD performance: 3500 V 11 G Material categorization: for definitions of compliance Top View Bottom View please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS S V (V) -12 DS R max. ( ) at V = -4,5 V 0.0130 DS(on) GS Smart phones, tablet PCs, mobile R max. ( ) at V = -3.7 V 0.0145 DS(on) GS computing R max. ( ) at V = -2.5 V 0.0190 DS(on) GS - Battery switch R max. ( ) at V = -1.8 V 0.0320 DS(on) GS G - Charger switch Q typ. (nC) 33 g - Load switch I (A) -12 D P-Channel MOSFET Configuration Single D ORDERING INFORMATION Package Thin PowerPAK SC-70-6L Lead (Pb)-free and halogen-free SiA477EDJT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -12 DS V Gate-Source Voltage V 8 GS a T = 25 C -12 C a T = 70 C -12 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C -12 A b, c T = 70 C -11 A A Pulsed Drain Current (t = 100 s) I -50 DM a T = 25 C -12 C Continuous Source-Drain Diode Current I S b, c T = 25 C -2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d, e 260 Soldering Recommendations (Peak temperature) THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W Maximum Junction-to-Case (Drain) Steady state R 5.3 6.5 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. S16-1724-Rev. A, 29-Aug-16 Document Number: 77703 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2.05 mm205 mmSiA477EDJT www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -12 - - V DS GS D V Temperature Coefficient V /T --3.9 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -2.5 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 - -1 V GS(th) DS GS D V = 0 V, V = 8 V - - 12 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V - - 1 DS GS A V = -20 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I DSS V = -20 V, V = 0 V, T = 55 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -20 - - A D(on) DS GS V = -4.5 V, I = -5 A - 0.0110 0.0130 GS D V = -3.7 V, I = -5 A - 0.0114 0.0145 GS D a Drain-Source On-State Resistance R DS(on) V = -2.5 V, I = -3 A - 0.0145 0.0190 GS D V = -1.8 V, I = -1 A - 0.0228 0.0320 GS D a Forward Transconductance g V = -6 V, I = -5 A - 30 - S fs DS D b Dynamic Input Capacitance C - 3050 - iss Output Capacitance C V = -6 V, V = 0 V, f = 1 MHz - 725 - pF oss DS GS Reverse Transfer Capacitance C - 740 - rss V = -6 V, V = -10 V, I = -10 A - 55 83 DS GS D Total Gate Charge Q g -33 50 nC Gate-Source Charge Q V = -6 V, V = -4.5 V, I = -10 A -4.3 - gs DS GS D Gate-Drain Charge Q -8.9 - gd Gate Resistance R f = 1 MHz 1.2 6 12 g Turn-On Delay Time t -25 50 d(on) Rise Time t -25 50 r V = -6 V, R = 1 DD L I -10 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -D GEN g70140 d(off) Fall Time t - 50 100 f ns Turn-On Delay Time t -10 20 d(on) Rise Time t -20 40 r V = -10 V, R = 1 DD L I -10 A, V = -8 V, R = 1 Turn-Off Delay Time t -D GEN g 90180 d(off) Fall Time t -46 90 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - -12 S C A Pulse Diode Forward Current I -- -50 SM Body Diode Voltage V I = -10 A, V = 0 V - -0.8 -1.2 V SD S GS Body Diode Reverse Recovery Time t - 60 120 ns rr Body Diode Reverse Recovery Charge Q -39 80 nC rr I = -10 A, dI/dt = 100 A/s, F T = 25 C Reverse Recovery Fall Time t J -22- a ns Reverse Recovery Rise Time t -38- b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1724-Rev. A, 29-Aug-16 Document Number: 77703 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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