New Product SiA811ADJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q I (A) DS DS(on) g D LITTLE FOOT Plus Schottky Power MOSFET 0.116 at V = - 4.5 V GS - 4.5 New Thermally Enhanced PowerPAK RoHS - 20 0.155 at V = - 2.5 V 4.9 nC GS - 4.5 COMPLIANT SC-70 Package 0.205 at V = - 1.8 V GS - 4.5 - Small Footprint Area - Low On-Resistance SCHOTTKY PRODUCT SUMMARY - Thin 0.75 mm profile V (V) f APPLICATIONS a V (V) KA Diode Forward Voltage I (A) F Cellular Charger Switch 20 0.45 at 1 A 2 Asynchronous DC/DC for Portable Devices Load Switch for Portable Devices PowerPAK SC-70-6 Dual S K 1 A Marking Code 2 G NC 3 HD X K D Part Code 0.75 mm X X X K D Lot Traceability 6 G and Date Code 5 2.05 mm 2.05 mm S D A 4 P-Channel MOSFET Ordering Information: SiA811ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage (MOSFET) - 20 DS V Reverse Voltage (Schottky) 20 V KA V Gate-Source Voltage (MOSFET) 8 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) (MOSFET) I J D b, c T = 25 C - 3.2 A b, c T = 70 C - 2.6 A I Pulsed Drain Current (MOSFET) - 8 A DM a T = 25 C - 4.5 Continuous Source-Drain Diode Current C I S b, c (MOSFET Diode Conduction) T = 25 C - 1.5 A b I Average Forward Current (Schottky) 2 F Pulsed Forward Current (Schottky) I 5 FM T = 25 C 6.5 C T = 70 C 4.2 C Maximum Power Dissipation (MOSFET) b, c T = 25 C 1.8 A b, c T = 70 C 1.1 A P W D T = 25 C 6.8 C T = 70 C 4.3 C Maximum Power Dissipation (Schottky) b, c T = 25 C 1.6 A b, c T = 70 C 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) Document Number: 68955 www.vishay.com S-82482-Rev. A, 13-Oct-08 1New Product SiA811ADJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, f R t 5 s 55 70 Maximum Junction-to-Ambient (MOSFET) thJA R Steady State 15 19 Maximum Junction-to-Case (Drain) (MOSFET) thJC C/W b, f R t 5 s thJA 62 76 Maximum Junction-to-Ambient (Schottky) R Maximum Junction-to-Case (Drain) (Schottky) Steady State 15 18.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (