New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition a 0.087 at V = - 10 V GS - 4.5 TrenchFET Power MOSFET - 30 3.2 nC a New Thermally Enhanced PowerPAK 0.145 at V = - 4.5 V - 4.5 GS SC-70 Package - Small Footprint Area - Low On-Resistance Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6 Dual Power Switch for Motor Drive for Portable Devices S S 1 2 1 S 1 2 Marking Code G 1 G G 3 1 2 D 1 D L X D 2 Part code D 1 X X X D 2 6 Lot Traceability G 2 and Date code 5 2.05 mm 2.05 mm S 2 4 D D 1 2 P-Channel MOSFET P-Channel MOSFET Ordering Information: SiA915DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 3.7 b, c T = 70 C A - 2.9 A I - 15 Pulsed Drain Current DM a T = 25 C - 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.6 A T = 25 C 6.5 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 52 65 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State thJC 12.5 16 Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W. Document Number: 67314 www.vishay.com S11-0237-Rev. A, 14-Feb-11 1New Product SiA915DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 22 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 10 A D(on) DS GS V = - 10 V, I = - 2.9 A 0.071 0.087 GS D a Drain-Source On-State Resistance R DS(on) V = - 4.5 V, I = - 2.2 A 0.118 0.145 GS D a Forward Transconductance g V = - 15 V, I = - 2.9 A 5 S fs DS D b Dynamic Input Capacitance C 275 iss Output Capacitance C V = - 15 V, V = 0 V, f = 1 MHz 60 pF oss DS GS Reverse Transfer Capacitance C 45 rss V = - 15 V, V = - 10 V, I = - 3.7 A 6 9 DS GS D Total Gate Charge Q g 3.2 5 nC Gate-Source Charge Q V = - 15 V, V = - 4.5 V, I = - 3.7 A 1.1 gs DS GS D Gate-Drain Charge Q 1.5 gd Gate Resistance R f = 1 MHz 1.5 7.5 15 g Turn-On Delay Time t 35 70 d(on) Rise Time t 25 50 V = - 15 V, R = 5 r DD L I - 3 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 15D GEN g 30 d(off) Fall Time t 10 20 f ns Turn-On Delay Time t 715 d(on) Rise Time t 10 20 V = - 15 V, R = 5 r DD L I - 3 A, V = - 10 V, R = 1 Turn-Off Delay Time t 15D GEN g 30 d(off) Fall Time t 10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 4.5 S C A Pulse Diode Forward Current I - 15 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.87 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 15 30 ns rr Body Diode Reverse Recovery Charge Q 714 nC rr I = - 3 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9.5 a ns Reverse Recovery Rise Time t 5.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67314 2 S11-0237-Rev. A, 14-Feb-11