New Product Si7658ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Gen III Power MOSFET RoHS g 0.0022 at V = 10 V GS 60 100 % R Tested COMPLIANT g 30 34 nC g 0.0028 at V = 4.5 V GS 60 100 % Avalanche Tested PowerPAK SO-8 APPLICATIONS Low-Side Switch for DC/DC Converters - Servers S 6.15 mm 5.15 mm - POL 1 S D - VRM 2 S 3 OR-ing G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7658ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V V 20 Gate-Source Voltage GS g T = 25 C C 60 g T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 36 b, c T = 70 C A 29 A I Pulsed Drain Current 80 DM g T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.9 I Single Pulse Avalanche Current 50 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 125 AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.4 b, c T = 70 C 3.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 18 23 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.5 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7658ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 28 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0018 0.0022 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0023 0.0028 GS D a g V = 10 V, I = 20 A 100 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4590 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 810 pF oss DS GS C Reverse Transfer Capacitance 320 rss V = 15 V, V = 10 V, I = 20 A 74 110 DS GS D Q Total Gate Charge g 34 51 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 20 A 12 gs DS GS D Q Gate-Drain Charge 10 gd R Gate Resistance f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 19 35 d(on) t Rise Time V = 15 V, R = 1.5 510 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 45 85 d(off) Fall Time t 510 f ns t Turn-On Delay Time 45 85 d(on) Rise Time t 18 45 V = 10 V, R = 1 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 60 110 d(off) Fall Time t 30 60 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 80 Pulse Diode Forward Current SM Body Diode Voltage V I = 4 A 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 33 50 ns rr Body Diode Reverse Recovery Charge Q 25 40 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns Reverse Recovery Rise Time t 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68640 2 S-81218-Rev. A, 02-Jun-08