SiB410DK Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) I (A) DS DS(on) g D 100 % R Tested g 0.042 at V = 4.5 V Material categorization: 9 GS For definitions of compliance please see 30 0.046 at V = 2.5 V 9 5.7 nC GS www.vishay.com/doc 99912 0.052 at V = 1.8 V 9 GS APPLICATIONS PowerPAK SC-75-6L-Single D DC/DC Converters Marking Code Boost Converters 1 D A H X 2 D X X X 3 G G Lot Traceability D 6 and Date code S D Part code 5 S 1.60 mm 1.60 mm 4 S N-Channel MOSFET Ordering Information: SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 8 GS a T = 25 C 9 C T = 70 C a C 9 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 5.9 b, c T = 70 C A A 4.7 I Pulsed Drain Current 20 DM T = 25 C a C 9 Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.1 T = 25 C 13 C T = 70 C 8.4 C P Maximum Power Dissipation W D b, c T = 25 C A 2.5 b, c T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R Maximum Junction-to-Ambient 41 51 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 7.5 9.5 thJC Notes: a. Package limited, T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 C/W. Document Number: 67020 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0630-Rev. B, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiB410DK Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 31 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.7 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V 4.5 V, I = 3.8 A 0.034 0.042 GS D a R V 2.5 V, I = 3.6 A 0.038 0.046 Drain-Source On-State Resistance DS(on) GS D V 1.8 V, I = 2 A 0.041 0.052 GS D a g V = 15 V, I = 3.8 A 30 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 560 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 60 pF oss DS GS C Reverse Transfer Capacitance 27 rss V = 15 V, V = 8 V, I = 3.4 A 10 15 DS GS D Q Total Gate Charge g 5.7 8.6 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 3.4 A 0.85 gs DS GS D Q Gate-Drain Charge 0.75 gd R Gate Resistance f = 1 MHz 0.6 3 6 g t Turn-On Delay Time 612 d(on) t Rise Time V = 15 V, R = 4.3 10 20 r DD L I 3.5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 20 40 D GEN g d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 510 d(on) Rise Time t 10 20 r V = 15 V, R = 4.3 DD L I 3.5 A, V = 8 V, R = 1 t Turn-Off Delay Time D GEN g 17 30 d(off) Fall Time t 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 1.5 S C A Pulse Diode Forward Current I 20 SM V I = 3.5 A, V 0 V Body Diode Voltage 0.8 1.2 V SD S GS t 15 30 ns Body Diode Reverse Recovery Time rr Q Body Diode Reverse Recovery Charge 612 nC rr I = 3.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 67020 2 S13-0630-Rev. B, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000