SiB417EDK Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.058 at V = - 4.5 V GS - 9.0 TrenchFET Power MOSFET a 0.080 at V = - 2.5 V GS - 9.0 New Thermally Enhanced PowerPAK SC-75 Package - 8 7.3 nC 0.100 at V = - 1.8 V - 4.0 GS - Small Footprint Area 0.130 at V = - 1.5 V - 2.0 GS - Low On-Resistance 0.250 at V = - 1.2 V - 0.5 GS 100 % R Tested g Typical ESD Protection 900 V S PowerPAK SC-75-6L-Single Compliant to RoHS Directive 2002/95/EC APPLICATIONS 1 Load Switch for Portable Devices D Marking Code 2 D B G X 3 Part code G G X X X D Lot Traceability 6 and Date code S D 5 S 1.60 mm 1.60 mm 4 D Ordering Information: SiB417EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 8 DS V Gate-Source Voltage V 5 GS a T = 25 C - 9 C a T = 70 C C - 9 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 5.8 b, c T = 70 C A - 4.6 A Pulsed Drain Current I - 15 DM a T = 25 C - 9 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2 A T = 25 C 13 C T = 70 C 8.4 C P Maximum Power Dissipation W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 41 51 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 7.5 9.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 C/W. Document Number: 68699 www.vishay.com S09-1500-Rev. B, 10-Aug-09 1SiB417EDK Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 8 V DS GS D V Temperature Coefficient V /T - 6.1 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.1 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.35 - 1 V GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Source Leakage 100 GSS DS GS V = - 8 V, V = 0 V - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.8 A 0.042 0.058 GS D V = - 2.5 V, I = - 5.0 A 0.058 0.080 GS D a R V = - 1.8 V, I = - 1.5 A 0.081 0.100 Drain-Source On-State Resistance DS(on) GS D V = - 1.5 V, I = - 0.75 A 0.096 0.130 GS D V = - 1.2 V, I = - 0.1 A 0.150 0.250 GS D a g V = - 4 V, I = - 5.8 A 11 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 565 iss C V = - 4 V, V = 0 V, f = 1 MHz Output Capacitance 215 pF oss DS GS C Reverse Transfer Capacitance 138 rss V = - 4 V, V = - 5 V, I = - 5.8 A 812 DS GS D Q Total Gate Charge g 7.3 11 nC Q Gate-Source Charge V = - 4 V, V = - 4.5 V, I = - 5.8 A 0.95 gs DS GS D Q Gate-Drain Charge 1.35 gd Gate Resistance R f = 1 MHz 1.9 9.5 19 g t Turn-On Delay Time 12 18 d(on) Rise Time t 31 46.5 V = - 4 V, R = 0.87 r DD L ns I - 4.6 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) Fall Time t 17 26 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 9 S C A I Pulse Diode Forward Current - 15 SM V I = - 4.6 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 32 48 ns rr Q Body Diode Reverse Recovery Charge 13 20 nC rr I = - 4.6 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 14 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68699 2 S09-1500-Rev. B, 10-Aug-09