SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q Thin-Lead TO-220 FULLPAK on g Low input capacitance (C ) iss Reduced switching and conduction losses Low gate charge (Q ) g G Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S S D APPLICATIONS G N-Channel MOSFET Computing - PC silver box / ATX power supplies Lighting PRODUCT SUMMARY - Two stage LED lighting V (V) at T max. 550 DS J R max. ( ) at 25 C V = 10 V 0.243 Consumer electronics DS(on) GS Q max. (nC) 66 g Applications using hard switched topologies Q (nC) 8 gs - Power factor correction (PFC) Q (nC) 14 gd - Two switch forward converter Configuration Single - Flyback converter Switch mode power supplies (SMPS) ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA15N50E-E3 Lead (Pb)-free and halogen-free SiHA15N50E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 14.5 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 9.2 A C a Pulsed drain current I 28 DM Linear derating factor 1.25 W/C b Single pulse avalanche energy E 136 mJ AS Maximum power dissipation P 33 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse diode dV/dt 27 c Soldering recommendations (peak temperature) for 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 3.1 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S17-1307-Rev. D, 21-Aug-17 Document Number: 91631 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA15N50E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V /T -0.62 - V temperature coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 500 V, V = 0 V - - 10 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-source on-state resistance R V = 10 V I = 7.5 A - 0.243 0.280 DS(on) GS D Forward transconductance g V = 30 V, I = 7.5 A - 3.9 - S fs DS D Dynamic Input capacitance C - 1162 - iss V = 0 V, GS Output capacitance C -5V = 100 V, 1- oss DS f = 1 MHz Reverse transfer capacitance C -7- rss pF Effective output capacitance, energy C -55 - a o(er) related V = 0 V to 400 V, V = 0 V DS GS Effective output capacitance, time C - 164 - o(tr) b related Total gate charge Q -33 66 g Gate-source charge Q -8V = 10 V I = 7.5 A, V = 400 V- nC gs GS D DS Gate-drain charge Q -14- gd Turn-on delay time t -15 30 d(on) Rise time t -24 48 r V = 400 V, I = 12 A, DD D ns Turn-off delay time t -3468 V = 10 V, R = 9.1 d(off) GS g Fall time t -1836 f Gate input resistance R f = 1 MHz, open drain - 0.85 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I - - 14.5 S showing the A integral reverse G Pulsed diode forward current I -- 28 SM S p - n junction diode Diode forward voltage V T = 25 C, I = 7.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 265 - ns rr T = 25 C, I = I = 7.5 A, J F S Reverse recovery charge Q -3.2 - C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -23 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1307-Rev. D, 21-Aug-17 Document Number: 91631 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000