SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 550 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.380 DS(on) GS Reduced switching and conduction losses Q max. (nC) 50 g Low gate charge (Q ) g Q (nC) 6 gs Avalanche energy rated (UIS) Q (nC) 10 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 APPLICATIONS D Computing DPAK - PC silver box / ATX power supplies (TO-252) Lighting D - Two stage LED lighting G Consumer electronics Applications using hard switched topologies S G - Power factor correction (PFC) S - Two switch forward converter N-Channel MOSFET - Flyback converter Switch mode power supplies (SMPS) ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHD12N50E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 10.5 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 6.6 A C a Pulsed Drain Current I 21 DM Linear Derating Factor 0.91 W/C b Single Pulse Avalanche Energy E 103 mJ AS Maximum Power Dissipation P 114 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 27 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2.7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -1.1 thJC S15-0278-Rev. B, 23-Feb-15 Document Number: 91636 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHD12N50E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.60 - V/C DS J DS D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 6 A - 0.330 0.380 DS(on) GS D Forward Transconductance g V = 30 V, I = 6 A - 3.1 - S fs DS D Dynamic Input Capacitance C - 886 - iss V = 0 V, GS Output Capacitance C -5V = 100 V, 2- oss DS f = 1 MHz Reverse Transfer Capacitance C -6- rss pF Effective Output Capacitance, Energy C -45 - o(er) a Related V = 0 V to 400 V, V = 0 V DS GS Effective Output Capacitance, Time C - 131 - b o(tr) Related Total Gate Charge Q -25 50 g Gate-Source Charge Q -6V = 10 V I = 6 A, V = 400 V- nC gs GS D DS Gate-Drain Charge Q -10- gd Turn-On Delay Time t -13 26 d(on) Rise Time t -16 32 r V = 400 V, I = 6 A, DD D ns Turn-Off Delay Time t -2V = 10 V, R = 9.1 958 d(off) GS g Fall Time t -1224 f Gate Input Resistance R f = 1 MHz, open drain - 0.92 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - 10.5 S showing the A G integral reverse Pulsed Diode Forward Current I -- 21 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 7.5 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 244 - ns rr T = 25 C, I = I = 6 A, J F S Reverse Recovery Charge Q -2.5 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -19 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0278-Rev. B, 23-Feb-15 Document Number: 91636 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000