SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES D TO-220 FULLPAK Optimal design - Low area specific on-resistance - Low input capacitance (C ) iss Available - Reduced capacitive switching losses G - High body diode ruggedness - Avalanche energy rated (UIS) Optimal efficiency and operation - Low cost S - Simple gate drive circuitry S D G N-Channel MOSFET - Low figure-of-merit (FOM): R x Q on g - Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY Note V (V) at T max. 550 DS J * This datasheet provides information about parts that are R max. ( ) at 25 C V = 10 V 0.28 DS(on) GS RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Q max. (nC) 76 g Please see the information / tables in this datasheet for details Q (nC) 11 gs APPLICATIONS Q (nC) 17 gd Configuration Single Consumer electronics - Displays (LCD or Plasma TV) Server and telecom power supplies - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free SiHF18N50D-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS Gate-source voltage 30 V V GS Gate-source voltage AC (f > 1 Hz) 30 T = 25 C 18 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 11 A C a Pulsed drain current I 53 DM Linear derating factor 0.3 W/C b Single pulse avalanche energy E 115 mJ AS Maximum power dissipation P 39 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 24 J dV/dt V/ns d Reverse diode dV/dt 0.4 c Soldering recommendations (peak temperature) For 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 10 A DD J g AS c. 1.6 mm from case d. I I , starting T = 25 C SD D J e. Limited by maximum junction temperature S18-0055-Rev. C, 22-Jan-18 Document Number: 91507 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHF18N50D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.2 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 250 A - 0.58 - V/C DS DS J D Gate threshold voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 9 A - 0.23 0.28 DS(on) GS D Forward transconductance g V = 50 V, I = 9 A - 6.4 - S fs DS D Dynamic Input capacitance C - 1500 - iss V = 0 V, GS Output capacitance C -V = 100 V, 131- oss DS f = 1.0 MHz Reverse transfer capacitance C -14- rss pF Effective output capacitance, energy C - 113 - a o(er) related V = 0 V, V = 0 V to 400 V GS DS Effective output capacitance, time C - 164 - o(tr) b related Total gate charge Q -38 76 g Gate-source charge Q -1V = 10 V I = 9 A, V = 400 V 1- nC gs GS D DS Gate-drain charge Q -17- gd Turn-on delay time t -19 38 d(on) Rise time t -36 72 r V = 400 V, I = 9 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -3GS g 672 d(off) Fall time t -3060 f Gate input resistance R f = 1 MHz, open drain - 1.7 - g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 18 S showing the A G integral reverse Pulsed diode forward current I -- 72 SM S P - N junction diode Diode forward voltage V T = 25 C, I = 9 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 354 - ns rr T = 25 C, I = I = 9 A, J F S Reverse recovery charge Q -3.9 - C rr dI/dt = 100 A/s, V = 20 V R Reverse recovery current I -21 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S18-0055-Rev. C, 22-Jan-18 Document Number: 91507 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000