SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design V (V) at T max. 650 DS J - Low Area Specific On-Resistance R max. at 25 C ()V = 10 V 0.340 DS(on) GS - Low Input Capacitance (C ) iss Q (Max.) (nC) 90 g - Reduced Capacitive Switching Losses Q (nC) 14 gs - High Body Diode Ruggedness Q (nC) 22 gd - Avalanche Energy Rated (UIS) Configuration Single Optimal Efficiency and Operation D - Low Cost - Simple Gate Drive Circuitry TO-247AC - Low Figure-of-Merit (FOM): R x Q on g - Fast Switching G Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 S APPLICATIONS D S G Consumer Electronics - Displays (LCD or Plasma TV) N-Channel MOSFET Lighting Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers SMPS ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG17N60D-E3 Lead (Pb)-free and Halogen-free SiHG17N60D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 17 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 10.7 A C a Pulsed Drain Current I 48 DM Linear Derating Factor 2.22 W/C b Single Pulse Avalanche Energy E 165.6 mJ AS Maximum Power Dissipation P 277.8 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.2 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 12 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S12-0685-Rev. A, 02-Apr-12 Document Number: 91496 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG17N60D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.7 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 100 DS GS J Drain-Source On-State Resistance R V = 10 V I = 8 A - 0.275 0.340 DS(on) GS D a Forward Transconductance g V = 50 V, I = 8 A - 6.2 - S fs DS D Dynamic Input Capacitance C V = 0 V, - 1780 - iss GS Output Capacitance C -V = 100 V, 140- pF oss DS Reverse Transfer Capacitance C -1f = 1 MHz 5- rss Total Gate Charge Q -45 90 g Gate-Source Charge Q -1V = 10 V I = 8 A, V = 480 V 4- nC gs GS D DS Gate-Drain Charge Q -22- gd Turn-On Delay Time t -22 45 d(on) Rise Time t -56 85 r V = 300 V, I = 8 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -3g GS 775 d(off) Fall Time t -3060 f Internal Gate Resistance R f = 1 MHz, open drain - 1.6 - g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 17 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 48 SM p - n junction diode Body Diode Voltage V T = 25 C, I = 8 A, V = 0 V - - 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 633 950 ns rr T = 25 C, I = I , J F S Body Diode Reverse Recovery Charge Q - 7 15 C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -21 42 A RRM Note a. Repetitive rating pulse width limited by maximum junction temperature. S12-0685-Rev. A, 02-Apr-12 Document Number: 91496 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000