X-On Electronics has gained recognition as a prominent supplier of SIHP12N50E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHP12N50E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHP12N50E-GE3 Vishay

SIHP12N50E-GE3 electronic component of Vishay
SIHP12N50E-GE3 Vishay
SIHP12N50E-GE3 MOSFETs
SIHP12N50E-GE3  Semiconductors

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See Product Specifications
Part No. SIHP12N50E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET N-Channel 500V
Datasheet: SIHP12N50E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5625 ea
Line Total: USD 1.56 
Availability - 3576
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3576
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 1.5625
10 : USD 1.332
50 : USD 0.9427
100 : USD 0.8877
250 : USD 0.8866
500 : USD 0.858
1000 : USD 0.8569
5000 : USD 0.825

461
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 2.324
5 : USD 2.086
12 : USD 1.61
32 : USD 1.526

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIHP12N50E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHP12N50E-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 550 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.380 DS(on) GS Reduced switching and conduction losses Q max. (nC) 50 g Low gate charge (Q ) g Q (nC) 6 gs Avalanche energy rated (UIS) Q (nC) 10 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 APPLICATIONS D Computing TO-220AB - PC silver box / ATX power supplies Lighting - Two stage LED lighting G Consumer electronics Applications using hard switched topologies S D - Power factor correction (PFC) G S - Two switch forward converter N-Channel MOSFET - Flyback converter Switch mode power supplies (SMPS) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and Halogen-free SiHP12N50E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 10.5 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 6.6 A C a Pulsed Drain Current I 21 DM Linear Derating Factor 0.91 W/C b Single Pulse Avalanche Energy E 103 mJ AS Maximum Power Dissipation P 114 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 27 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2.7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -1.1 thJC S15-0278-Rev. B, 23-Feb-15 Document Number: 91617 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP12N50E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.60 - V/C DS J DS D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 6 A - 0.330 0.380 DS(on) GS D Forward Transconductance g V = 30 V, I = 6 A - 3.1 - S fs DS D Dynamic Input Capacitance C - 886 - iss V = 0 V, GS Output Capacitance C -5V = 100 V, 2- oss DS f = 1 MHz Reverse Transfer Capacitance C -6- rss pF Effective Output Capacitance, Energy C -45 - o(er) a Related V = 0 V to 400 V, V = 0 V DS GS Effective Output Capacitance, Time C - 131 - b o(tr) Related Total Gate Charge Q -25 50 g Gate-Source Charge Q -6V = 10 V I = 6 A, V = 400 V- nC gs GS D DS Gate-Drain Charge Q -10- gd Turn-On Delay Time t -13 26 d(on) Rise Time t -16 32 r V = 400 V, I = 6 A, DD D ns Turn-Off Delay Time t -2V = 10 V, R = 9.1 958 d(off) GS g Fall Time t -1224 f Gate Input Resistance R f = 1 MHz, open drain - 0.92 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - 10.5 S showing the A G integral reverse Pulsed Diode Forward Current I -- 21 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 7.5 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 244 - ns rr T = 25 C, I = I = 6 A, J F S Reverse Recovery Charge Q -2.5 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -19 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0278-Rev. B, 23-Feb-15 Document Number: 91617 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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