SiHP18N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low figure-of-merit R x Q on g TO-220AB Available 100 % avalanche tested High peak current capability Available G dv/dt ruggedness Improved t /Q rr rr S Improved gate charge D S G High power dissipations capability N-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Note PRODUCT SUMMARY * This datasheet provides information about parts that are V (V) at T max. 560 DS J RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. R ( )V = 10 V 0.225 DS(on) GS Please see the information / tables in this datasheet for details Q max. (nC) 76 g Q (nC) 21 gs Q (nC) 29 gd Configuration Single ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and halogen-free SiHP18N50C-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 18 C a Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 11 A C b Pulsed drain current I 72 DM Linear derating factor 1.8 W/C c Single pulse avalanche energy E 361 mJ AS Maximum power dissipation P 223 W D d Reverse diode dv/dt dv/dt 5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Drain current limited by maximum junction temperature b. Repetitive rating pulse width limited by maximum junction temperature c. V = 50 V, starting T = 25 C, L = 2.5 mH, R = 25 , I = 17 A DD J g AS d. I 18 A, di/dt 380 A/s, V V , T 150 C SD DD DS J e. 1.6 mm from case THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.56 thJC S17-1726-Rev. E, 20-Nov-17 Document Number: 91374 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP18N50C www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.6 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J Drain-source on-state resistance R V = 10 V I = 10 A - 0.225 0.270 DS(on) GS D a Forward transconductance g V = 50 V, I = 10 A - 6.4 - S fs DS D Dynamic Input capacitance C - 2451 2942 iss V = 0 V, GS Output capacitance C V = 25 V, - 300 360 pF oss DS f = 1 MHz Reverse transfer capacitance C -26 32 rss Total gate charge Q -65 76 g Gate-source charge Q -2V = 10 V I = 18 A, V = 400 V1- nC gs GS D DS Gate-drain charge Q -29- gd Turn-on delay time t -80 - d(on) Rise time t -27 - r V = 250 V, I = 18 A, DD D ns V = 10 V, R = 7.5 Turn-off delay time t GS g -32 - d(off) Fall time t -44 - f Gate input resistance R f = 1 MHz, open drain - 1.1 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 18 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 72 S SM T = 25 C, I = 18 A, V = 0 V - - 1.5 V Diode forward voltage V SD J S GS Reverse recovery time t -503 - ns rr T = 25 C, I = I , J F S Reverse recovery charge Q -6.7 - C rr , V di/dt = 100 A/s = 35 V R Reverse recovery current I -30 - A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. S17-1726-Rev. E, 20-Nov-17 Document Number: 91374 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000