SiHG21N80AE www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g TO-247AC Low effective capacitance (C ) o(er) Reduced switching and conduction losses Avalanche energy rated (UIS) G Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S D G S APPLICATIONS N-Channel MOSFET Server and telecom power supplies Switch mode power supplies (SMPS) PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 850 DS J Lighting R typ. () at 25 C V = 10 V 0.205 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 72 g - Fluorescent ballast lighting Q (nC) 9 gs Industrial Q (nC) 22 gd - Welding Configuration Single - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG21N80AE-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 800 DS V Gate-source voltage V 30 GS T = 25 C 17.4 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 11 A C a Pulsed drain current I 38 DM Linear derating factor 1.4 W/C b Single pulse avalanche energy E 127 mJ AS Maximum power dissipation P 179 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 39 c Soldering recommendations (peak temperature) For 10 s 260 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 1.5 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J S20-0729-Rev. B, 21-Sep-2020 Document Number: 92268 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG21N80AE www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) R -0.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 800 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.8 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 800 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 640 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 11 A - 0.205 0.235 DS(on) GS D a Forward transconductance g V = 30 V, I = 3 A - 4.0 - S fs DS D Dynamic Input capacitance C - 1388 - iss V = 0 V, GS Output capacitance C V = 100 V, -53 - oss DS f = 1 MHz Reverse transfer capacitance C -5 - rss pF Effective output capacitance, energy C -43 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 276 - o(tr) b related Total gate charge Q -48 72 g Gate-source charge Q V = 10 V I = 11 A, V = 640 V -9 - nC gs GS D DS Gate-drain charge Q -22 - gd Turn-on delay time t -21 42 d(on) Rise time t -38 76 r V = 640 V, I = 11 A, DD D ns V = 10 V, R = 20 Turn-off delay time t GS g -71 107 d(off) Fall time t -76 114 f Gate input resistance R f = 1 MHz, open drain 0.2 0.55 1.1 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I - - 17.4 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 38 S SM Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 400 800 ns rr T = 25 C, I = I = 11 A, J F S Reverse recovery charge Q -5 10 C rr di/dt = 100 A/s, V = 25 V R Reverse recovery current I -20 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S20-0729-Rev. B, 21-Sep-2020 Document Number: 92268 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000