SiHH120N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Pin 4: drain th 4 generation E series technology PowerPAK 8 x 8 Low figure-of-merit (FOM) R x Q on g Pin 1: Low effective capacitance (C ) o(er) gate 4 Reduced switching and conduction losses 1 Pin 2: Avalanche energy rated (UIS) 2 Kelvin connection Material categorization: for definitions of compliance 3 Pin 3: source 3 please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 650 DS J Power factor correction power supplies (PFC) R typ. () at 25 C V = 10 V 0.120 DS(on) GS Lighting Q max. (nC) 44 g - High-intensity discharge (HID) Q (nC) 11 gs - Fluorescent ballast lighting Q (nC) 8 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package PowerPAK 8 x 8 Lead (Pb)-free and halogen-free SiHH120N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 24 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 15 A C a Pulsed drain current I 57 DM Linear derating factor 1.25 W/C b Single pulse avalanche energy E 56 mJ AS Maximum power dissipation P 156 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 100 J dv/dt V/ns c Reverse diode dv/dt 50 Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2 A DD J g AS c. I I , di/dt = 100 A/s, starting T = 25 C SD D J S20-0341-Rev. B, 11-May-2020 Document Number: 92093 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHH120N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R 42 55 thJA C/W Maximum junction-to-case (drain) 0.57 0.80 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.60 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 12 A - 0.106 0.120 DS(on) GS D Forward transconductance g V = 20 V, I = 12 A - 6.9 - S fs DS D Dynamic Input capacitance C -1600- iss V = 0 V, GS Output capacitance C -7V = 100 V, 6- oss DS f = 1 MHz Reverse transfer capacitance C -6- rss pF Effective output capacitance, energy C -57 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C -355 - o(tr) b related Total gate charge Q -29 44 g Gate-source charge Q -1V = 10 V I = 12 A, V = 480 V1- nC gs GS D DS Gate-drain charge Q -8- gd Turn-on delay time t -25 50 d(on) Rise time t -47 94 r V = 480 V, I = 12 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -3GS g 878 d(off) Fall time t -2958 f Gate input resistance R f = 1 MHz 0.32 0.63 1.26 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 24 S showing the A G integral reverse Pulsed diode forward current I -- 57 SM p - n junction diode S Diode forward voltage V T = 25 C, I = 12 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 343 686 ns rr T = 25 C, I = I = 12 A, J F S Reverse recovery charge Q - 5.6 11.2 C rr di/dt = 100 A/s, V = 400 V R Reverse recovery current I -30 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S20-0341-Rev. B, 11-May-2020 Document Number: 92093 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000