SiHW22N65E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Figure-of-Merit (FOM) R x Q
on g
V (V) at T max. 700
DS J
Low Input Capacitance (C )
iss
R max. at 25 C ()V = 10 V 0.18
DS(on) GS
Reduced Switching and Conduction Losses
Q max. (nC) 110
g
Ultra Low Gate Charge (Q )
g
Q (nC) 15
gs
Avalanche Energy Rated (UIS)
Q (nC) 32
gd
Material categorization: For definitions of
Configuration Single
compliance please see www.vishay.com/doc?99912
D
APPLICATIONS
TO-247AD
Server and Telecom Power Supplies
Switch Mode Power Supplies (SMPS)
Power Factor Correction Power Supplies (PFC)
G
Lighting
- High-Intensity Discharge (HID)
G
- Fluorescent Ballast Lighting
DD
SS
Industrial
S
- Welding
N-Channel MOSFET
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package TO-247AD
Lead (Pb)-free and Halogen-free SiHW22N65E-GE3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage
V 650
DS
V
Gate-Source Voltage 20
V
GS
Gate-Source Voltage AC (f > 1 Hz) 30
T = 25 C 22
C
Continuous Drain Current (T = 150 C) V at 10 V I
J GS D
T = 100 C 14 A
C
a
Pulsed Drain Current I 56
DM
Linear Derating Factor 1.8 W/C
b
Single Pulse Avalanche Energy E 691 mJ
AS
Maximum Power Dissipation P 227 W
D
Operating Junction and Storage Temperature Range T , T - 55 to + 150 C
J stg
Drain-Source Voltage Slope T = 125 C 37
J
dV/dt V/ns
d
Reverse Diode dV/dt 26
c
Soldering Recommendations (Peak Temperature) for 10 s 300 C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A.
DD J g AS
c. 1.6 mm from case.
d. I I , dI/dt = 100 A/s, starting T = 25 C.
SD D J
S13-0447-Rev. A, 11-Mar-13 Document Number: 91540
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000SiHW22N65E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R -62
thJA
C/W
Maximum Junction-to-Case (Drain) -0.55
R
thJC
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V
DS GS D
V /T -0.74 -
V Temperature Coefficient Reference to 25 C, I = 1 mA V/C
DS DS J D
Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V
GS(th) DS GS D
Gate-Source Leakage I V = 20 V - - 100 nA
GSS GS
V = 650 V, V = 0 V - - 1
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = 520 V, V = 0 V, T = 125 C - - 10
DS GS J
Drain-Source On-State Resistance R V = 10 V I = 11 A - 0.15 0.18
DS(on) GS D
Forward Transconductance g V = 8 V, I = 5 A - 6.7 - S
fs DS D
Dynamic
Input Capacitance C - 2415 -
iss
V = 0 V,
GS
Output Capacitance C -V = 100 V, 118-
oss DS
f = 1 MHz
Reverse Transfer Capacitance C -4-
rss
pF
Effective Output Capacitance, Energy
C -89 -
o(er)
a
Related
V = 0 V to 520 V, V = 0 V
DS GS
Effective Output Capacitance, Time
C - 307 -
b o(tr)
Related
Total Gate Charge Q - 73 110
g
Gate-Source Charge Q -1V = 10 V I = 11 A, V = 520 V5- nC
gs GS D DS
Gate-Drain Charge Q -32-
gd
Turn-On Delay Time t -22 45
d(on)
Rise Time t -33 66
r V = 520 V, I = 11 A,
DD D
ns
V = 10 V, R = 9.1
GS g
Turn-Off Delay Time t -73110
d(off)
Fall Time t -3876
f
Gate Input Resistance R f = 1 MHz, open drain - 0.64 -
g
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- 22
S
showing the
A
G
integral reverse
Pulsed Diode Forward Current I -- 56
S
SM
p - n junction diode
Diode Forward Voltage V T = 25 C, I = 11 A, V = 0 V - - 1.2 V
SD J S GS
Reverse Recovery Time t - 400 - ns
rr
T = 25 C, I = I = 11 A,
J F S
Reverse Recovery Charge Q -5.9 - C
rr
dI/dt = 100 A/s, V = 400 V
R
Reverse Recovery Current I -20 - A
RRM
Notes
a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V .
oss(er) oss DS DSS
b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V .
oss(tr) oss DS DSS
S13-0447-Rev. A, 11-Mar-13 Document Number: 91540
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000