SiHG22N60AEL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g TO-247AC Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S D S please see www.vishay.com/doc 99912 G N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 650 DS J Power factor correction power supplies (PFC) R typ. () at 25 C V = 10 V 0.155 DS(on) GS Lighting Q max. (nC) 82 g - High-intensity discharge (HID) Q (nC) 20 gs - Fluorescent ballast lighting Q (nC) 13 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG22N60AEL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 21 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 13 A C a Pulsed drain current I 48 DM Linear derating factor 1.7 W/C b Single pulse avalanche energy E 183 mJ AS Maximum power dissipation P 208 W D Operating junction and storage temperature range T , T -55 to +150 C J stg d Reverse diode dv/dt dv/dt 50 V/ns c Soldering recommendations (peak temperature) For 10 s 260 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 3.6 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J S18-0347-Rev. A, 26-Mar-18 Document Number: 92080 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG22N60AEL www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) R -0.6 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.68 - V/C DS DS J D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 11 A - 0.155 0.180 DS(on) GS D Forward transconductance g V = 8 V, I = 11 A - 16 - S fs DS D Dynamic Input capacitance C - 1757 - iss V = 0 V, GS Output capacitance C V = 100 V, -74 - oss DS f = 1 MHz Reverse transfer capacitance C -6 - rss pF Effective output capacitance, energy C -48 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 257 - o(tr) b related Total gate charge Q -41 82 g Gate-source charge Q V = 10 V I = 11 A, V = 480 V -10 - nC gs GS D DS Gate-drain charge Q -13 - gd Turn-on delay time t -27 54 d(on) Rise time t -24 48 r V = 480 V, I = 11 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t GS g -86 172 d(off) Fall time t -28 56 f Gate input resistance R f = 1 MHz, open drain 3.6 7.2 14.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 21 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 48 S SM Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 285 570 ns rr T = 25 C, I = I = 11 A, J F S Reverse recovery charge Q -4.1 8.2 C rr di/dt = 100 A/s, V = 400 V R Reverse recovery current I -27 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S18-0347-Rev. A, 26-Mar-18 Document Number: 92080 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000