DMJ70H1D3SI3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(on) max T = +25C C High BVDss rating for power application 700V 1.3 V = 10V 4.6A GS Low Input Capacitance Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: TO251 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminal Connections: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. AC-DC Converters Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) TO251 (MIPAK) TO251 TO251 Top View Internal Schematic Top View Bottom View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMJ70H1D3SI3 TO251 75pieces / tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMJ70H1D3SI3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 700 V DSS Gate-Source Voltage V 30 V GSS T = +25C 4.6 C A Continuous Drain Current (Note 5) V = 10V I GS D 2.9 T = +100C C Maximum Body Diode Forward Current (Note 6) 3.0 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 5.4 A I DM Avalanche Current (Note 7) L = 60mH 1.1 A I AS Avalanche Energy (Note 7) L = 60mH E 40 mJ AS Peak Diode Recovery dv/dt (Note 7) dv/dt 5 V/ns Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 41 TC = +25C Total Power Dissipation (Note 5) W PD 16 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) 79 R JA C/W Thermal Resistance, Junction to Case (Note 5) 3.0 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 700 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current 1 A I V = 700V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 2 2.9 4 V V V = V , I = 250A GS(th) DS GS D Static Drain-Source On-Resistance 1.0 1.3 R V = 10V, I = 2.5A DS(ON) GS D Diode Forward Voltage 0.9 1.3 V V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 351 C iss V = 50V, f = 1MHz, DS 66 Output Capacitance C pF oss V = 0V GS 1.1 Reverse Transfer Capacitance C rss 3.5 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 13.9 Total Gate Charge Q g V = 560V, I = 5A, DD D 1.9 Gate-Source Charge nC Q gs V = 10V GS Gate-Drain Charge 8.5 Q gd Turn-On Delay Time 8.5 t D(on) Turn-On Rise Time 11.6 t V = 350V, V = 10V, r DD GS ns Turn-Off Delay Time 24.5 t R = 4.7, I = 2.5A D(off) G D 10 Turn-Off Fall Time t f 212 Body Diode Reverse Recovery Time t ns rr 251 Body Diode Reverse Recovery Time (T = +150C) t ns J rr I = 5A, dI/dt = 100A/s S 1.8 Body Diode Reverse Recovery Charge Q C rr 2.3 Body Diode Reverse Recovery Charge (T = +150C) Q C J rr Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMJ70H1D3SI3 November 2015 Diodes Incorporated www.diodes.com Document number: DS38121 Rev. 1 - 2 NEW PRODUCT ADVANCED INFORMATION