Advance Technical Information TM Linear Power MOSFET V = 1500V IXTH2N150L DSS I = 2A w/Extended FBSOA D25 R 15 DS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain S = Source Tab = Drain V T = 25 C to 150 C 1500 V DSS J V T = 25 C to 150 C, R = 1M 1500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C 2 A D25 C I T = 25 C, Pulse Width Limited by T 6 A DM C JM P T = 25 C 290 W D C Features T -55 to +150 C J T +150 C JM Designed for Linear Operation T -55 to +150 C International Standard Package stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Guaranteed FBSOA at 75 C T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d Advantages Weight 6 g Easy to Mount Space Savings High Power Density Applications DC Choppers DC-DC Converters Battery Chagers Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Programmable Loads J Current Regulators BV V = 0V, I = 250 A 1500 V DSS GS D Temperature and Lighting Controls V V = V , I = 250 A 6.0 8.5 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 15 A DSS DS DSS GS T = 125C 150 A J R V = 20V, I = 0.5 I , Note 1 15 DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100584(12/13) IXTH2N150L Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 0.4 0.7 S fs DS D D25 C 1470 pF iss C V = 0V, V = 25V, f = 1MHz 92 pF P oss GS DS 1 2 3 C 30 pF rss t 33 ns d(on) Resistive Switching Times t 55 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 85 ns d(off) R =10 (External) G t 84 ns e f Terminals: 1 - Gate 2 - Drain Q 72 nC g(on) 3 - Source Q V = 20V, V = 0.5 V , I = 0.5 I 15 nC gs GS DS DSS D D25 Dim. Millimeter Inches Q 30 nC gd Min. Max. Min. Max. A 4.7 5.3 .185 .209 R 0.43 C/W thJC A 2.2 2.54 .087 .102 1 R 0.21 C/W A 2.2 2.6 .059 .098 2 thCS b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Safe Operating Area Specification L 19.81 20.32 .780 .800 L1 4.50 .177 Characteristic Values P 3.55 3.65 .140 .144 Symbol Test Conditions Min. Typ. Max. Q 5.89 6.40 0.232 0.252 SOA V = 1200V, I = 0.10A, T = 75C, Tp = 5s 120 W R 4.32 5.49 .170 .216 DS D C S 6.15 BSC 242 BSC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 2 A S GS I Repetitive, Pulse Width Limited by T 8 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1.86 s rr I = 2A, -di/dt = 100A/ s, F I 24 A RM V = 100V, V = 0V R GS Q 22 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537