X-On Electronics has gained recognition as a prominent supplier of IXTH2N150L MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH2N150L MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTH2N150L IXYS

IXTH2N150L electronic component of IXYS
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Part No.IXTH2N150L
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET MSFT N-CH LINEAR STD
Datasheet: IXTH2N150L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.4346 ea
Line Total: USD 8.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 8.4346
10 : USD 7.192
100 : USD 6.3763
250 : USD 6.247
500 : USD 6.0181
1000 : USD 5.7496
2500 : USD 5.7396
5000 : USD 5.4313
10000 : USD 5.302

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 19.5397
2 : USD 13.4064
4 : USD 12.6736

   
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We are delighted to provide the IXTH2N150L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH2N150L and other electronic components in the MOSFETs category and beyond.

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Advance Technical Information TM Linear Power MOSFET V = 1500V IXTH2N150L DSS I = 2A w/Extended FBSOA D25 R 15 DS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain S = Source Tab = Drain V T = 25 C to 150 C 1500 V DSS J V T = 25 C to 150 C, R = 1M 1500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C 2 A D25 C I T = 25 C, Pulse Width Limited by T 6 A DM C JM P T = 25 C 290 W D C Features T -55 to +150 C J T +150 C JM Designed for Linear Operation T -55 to +150 C International Standard Package stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Guaranteed FBSOA at 75 C T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d Advantages Weight 6 g Easy to Mount Space Savings High Power Density Applications DC Choppers DC-DC Converters Battery Chagers Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Programmable Loads J Current Regulators BV V = 0V, I = 250 A 1500 V DSS GS D Temperature and Lighting Controls V V = V , I = 250 A 6.0 8.5 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 15 A DSS DS DSS GS T = 125C 150 A J R V = 20V, I = 0.5 I , Note 1 15 DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100584(12/13) IXTH2N150L Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 0.4 0.7 S fs DS D D25 C 1470 pF iss C V = 0V, V = 25V, f = 1MHz 92 pF P oss GS DS 1 2 3 C 30 pF rss t 33 ns d(on) Resistive Switching Times t 55 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 85 ns d(off) R =10 (External) G t 84 ns e f Terminals: 1 - Gate 2 - Drain Q 72 nC g(on) 3 - Source Q V = 20V, V = 0.5 V , I = 0.5 I 15 nC gs GS DS DSS D D25 Dim. Millimeter Inches Q 30 nC gd Min. Max. Min. Max. A 4.7 5.3 .185 .209 R 0.43 C/W thJC A 2.2 2.54 .087 .102 1 R 0.21 C/W A 2.2 2.6 .059 .098 2 thCS b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Safe Operating Area Specification L 19.81 20.32 .780 .800 L1 4.50 .177 Characteristic Values P 3.55 3.65 .140 .144 Symbol Test Conditions Min. Typ. Max. Q 5.89 6.40 0.232 0.252 SOA V = 1200V, I = 0.10A, T = 75C, Tp = 5s 120 W R 4.32 5.49 .170 .216 DS D C S 6.15 BSC 242 BSC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 2 A S GS I Repetitive, Pulse Width Limited by T 8 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1.86 s rr I = 2A, -di/dt = 100A/ s, F I 24 A RM V = 100V, V = 0V R GS Q 22 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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