X-On Electronics has gained recognition as a prominent supplier of SIHG22N65E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHG22N65E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHG22N65E-GE3 Vishay

SIHG22N65E-GE3 electronic component of Vishay
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Part No.SIHG22N65E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 650V 180mOhm10V 22A N-Ch E-SRS
Datasheet: SIHG22N65E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 2.651 ea
Line Total: USD 1325.5 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 500
Multiples : 500
500 : USD 2.651
1000 : USD 2.629
2500 : USD 2.618
5000 : USD 2.607

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the SIHG22N65E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHG22N65E-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 700 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.18 DS(on) GS Reduced switching and conduction losses Available Q max. (nC) 110 g Ultra low gate charge (Q ) g Q (nC) 15 gs Available Avalanche energy rated (UIS) Q (nC) 32 gd Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 Note D TO-247AC * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. APPLICATIONS G Server and telecom power supplies S Switch mode power supplies (SMPS) D G Power factor correction power supplies (PFC) S Lighting N-Channel MOSFET - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG22N65E-E3 Lead (Pb)-free and Halogen-free SiHG22N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 22 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 14 A C a Pulsed Drain Current I 56 DM Linear Derating Factor 1.8 W/C b Single Pulse Avalanche Energy E 691 mJ AS Maximum Power Dissipation P 227 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 26 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-0291-Rev. C, 23-Feb-15 Document Number: 91539 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG22N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.55 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V /T -0.74 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 11 A - 0.15 0.18 DS(on) GS D Forward Transconductance g V = 8 V, I = 5 A - 6.7 - S fs DS D Dynamic Input Capacitance C - 2415 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 118- oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss pF Effective Output Capacitance, Energy C -89 - a o(er) Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C - 307 - o(tr) b Related Total Gate Charge Q -73 110 g Gate-Source Charge Q -1V = 10 V I = 11 A, V = 520 V5- nC gs GS D DS Gate-Drain Charge Q -32- gd Turn-On Delay Time t -22 45 d(on) Rise Time t -33 66 r V = 520 V, I = 11 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -7GS g 3110 d(off) Fall Time t -3876 f Gate Input Resistance R f = 1 MHz, open drain - 0.64 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 22 S showing the A G integral reverse Pulsed Diode Forward Current I -- 56 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 11 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 400 - ns rr T = 25 C, I = I = 11 A, J F S Reverse Recovery Charge Q -5.9 - C rr dI/dt = 100 A/s, V = 400 V R Reverse Recovery Current I -20 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0291-Rev. C, 23-Feb-15 Document Number: 91539 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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