X-On Electronics has gained recognition as a prominent supplier of SIHG25N60EFL-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHG25N60EFL-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHG25N60EFL-GE3 Vishay

SIHG25N60EFL-GE3 electronic component of Vishay
SIHG25N60EFL-GE3 Vishay
SIHG25N60EFL-GE3 MOSFETs
SIHG25N60EFL-GE3  Semiconductors

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Part No. SIHG25N60EFL-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Ch 650V Vds w/ Fast Body Diode
Datasheet: SIHG25N60EFL-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.075 ea
Line Total: USD 4.08 
Availability - 320
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
320
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 1
Multiples : 1
1 : USD 4.075
100 : USD 3.289
500 : USD 2.651
1000 : USD 2.563

   
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We are delighted to provide the SIHG25N60EFL-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHG25N60EFL-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHG25N60EFL www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES PRODUCT SUMMARY Reduced figure-of-merit (FOM): R x Q on g V (V) at T max. 650 DS J Fast body diode MOSFET using E series R typ. () at 25 C V = 10 V 0.127 DS(on) GS technology Q (Max.) (nC) 75 g Reduced t , Q , and I rr rr RRM Q (nC) 17 gs Increased robustness due to low Q rr Q (nC) 19 gd Low input capacitance (C ) iss Configuration Single Reduced switching and conduction losses D Avalanche energy rated (UIS) TO-247AC Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS G Telecommunications - Server and telecom power supplies S Computing D S G - ATX power supplies N-Channel MOSFET Industrial - Welding - Induction heating - Battery chargers - Uninterruptible power supplies (UPS) Renewable energy - String PV inverters ORDERING INFORMATION TO-247AC Package Lead (Pb)-free and Halogen-free SiHG25N60EFL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 25 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 16 A C a Pulsed Drain Current I 61 DM Linear Derating Factor 2W/C b Single Pulse Avalanche Energy E 353 mJ AS Maximum Power Dissipation P 250 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 15 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-1230-Rev. A, 20-Jun-16 Document Number: 91846 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG25N60EFL www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 10 mA - 0.69 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 12.5 A - 0.127 0.146 DS(on) GS D Forward Transconductance g V = 30 V, I = 12.5 A - 11.3 - S fs DS D Dynamic Input Capacitance C - 2274 - V = 0 V, iss GS Output Capacitance C -V = 100 V, 137- oss DS Reverse Transfer Capacitance C -4f = 1 MHz - rss pF Effective Output Capacitance, Energy C -79 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 330 - o(tr) b Related Total Gate Charge Q -50 75 g Gate-Source Charge Q -1V = 10 V I = 12.5 A, V = 480 V 7- nC gs GS D DS Gate-Drain Charge Q -19- gd Turn-On Delay Time t -25 50 d(on) Rise Time t -39 68 r V = 480 V, I = 12.5 A, DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -4g GS 794 d(off) Fall Time t -2142 f Gate Input Resistance R f = 1 MHz, open drain 0.4 0.7 1.4 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 25 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 61 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 12.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 138 276 ns rr T = 25 C, I = I =12.5 A, J F S Reverse Recovery Charge Q -0.8 1.6 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -11 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-1230-Rev. A, 20-Jun-16 Document Number: 91846 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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