SiHG25N60EFL www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES PRODUCT SUMMARY Reduced figure-of-merit (FOM): R x Q on g V (V) at T max. 650 DS J Fast body diode MOSFET using E series R typ. () at 25 C V = 10 V 0.127 DS(on) GS technology Q (Max.) (nC) 75 g Reduced t , Q , and I rr rr RRM Q (nC) 17 gs Increased robustness due to low Q rr Q (nC) 19 gd Low input capacitance (C ) iss Configuration Single Reduced switching and conduction losses D Avalanche energy rated (UIS) TO-247AC Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS G Telecommunications - Server and telecom power supplies S Computing D S G - ATX power supplies N-Channel MOSFET Industrial - Welding - Induction heating - Battery chargers - Uninterruptible power supplies (UPS) Renewable energy - String PV inverters ORDERING INFORMATION TO-247AC Package Lead (Pb)-free and Halogen-free SiHG25N60EFL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 25 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 16 A C a Pulsed Drain Current I 61 DM Linear Derating Factor 2W/C b Single Pulse Avalanche Energy E 353 mJ AS Maximum Power Dissipation P 250 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 15 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-1230-Rev. A, 20-Jun-16 Document Number: 91846 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG25N60EFL www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 10 mA - 0.69 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 12.5 A - 0.127 0.146 DS(on) GS D Forward Transconductance g V = 30 V, I = 12.5 A - 11.3 - S fs DS D Dynamic Input Capacitance C - 2274 - V = 0 V, iss GS Output Capacitance C -V = 100 V, 137- oss DS Reverse Transfer Capacitance C -4f = 1 MHz - rss pF Effective Output Capacitance, Energy C -79 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 330 - o(tr) b Related Total Gate Charge Q -50 75 g Gate-Source Charge Q -1V = 10 V I = 12.5 A, V = 480 V 7- nC gs GS D DS Gate-Drain Charge Q -19- gd Turn-On Delay Time t -25 50 d(on) Rise Time t -39 68 r V = 480 V, I = 12.5 A, DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -4g GS 794 d(off) Fall Time t -2142 f Gate Input Resistance R f = 1 MHz, open drain 0.4 0.7 1.4 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 25 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 61 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 12.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 138 276 ns rr T = 25 C, I = I =12.5 A, J F S Reverse Recovery Charge Q -0.8 1.6 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -11 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-1230-Rev. A, 20-Jun-16 Document Number: 91846 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000