X-On Electronics has gained recognition as a prominent supplier of RSQ045N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ045N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSQ045N03TR ROHM

RSQ045N03TR electronic component of ROHM
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See Product Specifications
Part No.RSQ045N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET N-CH 30V 4.5A TSMT6
Datasheet: RSQ045N03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3168 ea
Line Total: USD 950.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3168
6000 : USD 0.2979

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.882
10 : USD 0.7492

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.3399

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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We are delighted to provide the RSQ045N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ045N03TR and other electronic components in the MOSFETs category and beyond.

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RSQ045N03 Nch 30V 4.5A Power MOSFET Datasheet lOutline (6) V 30V DSS TSMT6 (5) (4) R (Max.) 38mW DS(on) I 4.5A (1) D (2) P 1.25W D (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking QL lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 Continuous drain current I 4.5 A D *2 Pulsed drain current A I 18 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 1/11Data Sheet RSQ045N03 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 26 - mV/C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I =1mA Gate threshold voltage (GS)th D - -2.8 - mV/C temperature coefficient T referenced to 25C j V =10V, I =4.5A - 27 38 GS D V =4.5V, I =4.5A - 36 51 GS D Static drain - source *5 R m W DS(on) on - state resistance V =4.0V, I =4.5A - 40 56 GS D V =10V, I =4.5A, T =125C - 50 70 GS D j R Gate input resistannce f = 1MHz, open drain - 6 - W G *5 Transconductance V =10V, I =4.5A 3.5 7.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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