X-On Electronics has gained recognition as a prominent supplier of RSR010N10FHATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR010N10FHATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSR010N10FHATL ROHM

RSR010N10FHATL electronic component of ROHM
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See Product Specifications
Part No.RSR010N10FHATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET N Trench 100V 1A 2.5V @ 1mA 520 mΩ @ 1A,10V TSMT3 RoHS
Datasheet: RSR010N10FHATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4472 ea
Line Total: USD 0.45 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5
Multiples : 1
5 : USD 1.0953
50 : USD 0.7534
100 : USD 0.5749
500 : USD 0.4917
1500 : USD 0.4094

0
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4472
10 : USD 0.3659
30 : USD 0.329
100 : USD 0.2847
500 : USD 0.2661
1000 : USD 0.2532
3000 : USD 0.2496
6000 : USD 0.2477

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the RSR010N10FHATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR010N10FHATL and other electronic components in the MOSFETs category and beyond.

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RSR010N10FHA Datasheet Nch 100V 1A Small Signal MOSFET llOutline SOT-346T V 100V DSS SC-96 R (Max.) 520m DS(on) TSMT3 I 1A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking ZJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 100 V DSS Continuous drain current I 1 A D *1 I Pulsed drain current 4 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I 1.0 A AS *2 E Avalanche energy, single pulse 0.7 mJ AS *3 P 1.0 W D Power dissipation *4 P 0.7 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170220 - Rev.001 RSR010N10FHA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 /W thJA Thermal resistance, junction - ambient *4 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1A - 370 520 GS D Static drain - source *5 R V = 4.5V, I = 1A - 400 560 m DS(on) GS D on - state resistance V = 4.0V, I = 1A - 410 580 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *5 Y V = 10V, I = 1A 1.0 3.1 - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1.0mH, V = 50V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20170220 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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