X-On Electronics has gained recognition as a prominent supplier of RSH070N05GZETB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSH070N05GZETB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSH070N05GZETB ROHM

RSH070N05GZETB electronic component of ROHM
RSH070N05GZETB ROHM
RSH070N05GZETB MOSFETs
RSH070N05GZETB  Semiconductors

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See Product Specifications
Part No. RSH070N05GZETB
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 45 V 7A (Ta) 2W (Ta) Surface Mount 8-SOP
Datasheet: RSH070N05GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.474 ea
Line Total: USD 1.47 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 1
1 : USD 1.4077
10 : USD 1.2005
100 : USD 0.9363
500 : USD 0.7734
1000 : USD 0.6105

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 1
1 : USD 1.4077
10 : USD 1.2005
100 : USD 0.9363
500 : USD 0.7734
1000 : USD 0.6105

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.5936

0
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 1.474
10 : USD 0.9482
100 : USD 0.6677
500 : USD 0.5511
1000 : USD 0.5137
2500 : USD 0.4741
5000 : USD 0.4543

   
Manufacturer
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RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSH070N05GZETB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSH070N05GZETB and other electronic components in the MOSFETs category and beyond.

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RSH070N05 Datasheet Nch 45V 7A Power MOSFET llOutline V 45V DSS SOP8 R (Max.) 25m DS(on) I 7.0A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RSH070N05 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 7.0 A D *1 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170117 - Rev.001 RSH070N05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 7A - 18 25 GS D Static drain - source *4 R V = 4.5V, I = 7A - 23 32 m DS(on) GS D on - state resistance V = 4.0V, I = 7A - 25 35 GS D R Gate resistance f = 1MHz, open drain - 3.2 - G Forward Transfer *4 Y V = 10V, I = 7A 6.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170117 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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