X-On Electronics has gained recognition as a prominent supplier of RSJ151P10TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSJ151P10TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSJ151P10TL ROHM

RSJ151P10TL electronic component of ROHM
RSJ151P10TL ROHM
RSJ151P10TL MOSFETs
RSJ151P10TL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RSJ151P10TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RSJ151P10TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8365 ea
Line Total: USD 1.84 
Availability - 1109
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
57
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 1.5764
10 : USD 1.4467
30 : USD 1.3652
100 : USD 1.2814
500 : USD 1.2437
1000 : USD 1.2271

1109
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.8365
10 : USD 1.2243
100 : USD 0.8766
500 : USD 0.738
1000 : USD 0.7265
2000 : USD 0.6734
5000 : USD 0.6468

591
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 71
Multiples : 1
71 : USD 1.5384

219
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 39
Multiples : 1
39 : USD 1.7574
50 : USD 1.6567
100 : USD 1.2371
200 : USD 1.1789

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Polarity
Drain-Source On-Volt
Number Of Elements
Package Type
Gate-Source Voltage Max
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSJ151P10TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSJ151P10TL and other electronic components in the MOSFETs category and beyond.

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RSJ151P10 Pch 100V 15A Power MOSFET Datasheet Outline V 100V DSS TO-263S R (Max.) 120m DS(on) SC-83 I 15A D LPT(S) (1) (2) P 50W D (3) Features Inner circuit 1) Low on-resistance. 1 (1) Gate 2) Fast switching speed. (2) Drain 2 (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 ESD PROTECTION DIODE (1) (2) (3) 2 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RSJ151P10 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V 100 DSS *1 T = 25C I 15 A c D Continuous drain current *1 T = 100C I 8 A c D *2 Pulsed drain current A I 30 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 33 mJ E AS *3 Avalanche current I 15 A AR T = 25C P 50 W c D Power dissipation *4 P 1.35 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.C 1/12Datasheet RSJ151P10 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 2.5 C/W Thermal resistance, junction - case thJC *4 R - - 92.6 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V Drain - Source breakdown voltage V = 0V, I = 1mA 100 -- V (BR)DSS GS D V = 100V, V = 0V DS GS - - 1 T = 25C j Zero gate voltage drain current I A DSS V = 100V, V = 0V DS GS - - 100 = 125C T j I V = 20V, V = 0V Gate - Source leakage current -- 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA - V 1.0 2.5 GS (th) DS D V = 10V, I = 15A - 85 120 GS D V = 4.5V, I = 15A - 95 135 GS D Static drain - source *5 R V = 4.0V, I = 15A - 100 140 m GS D DS(on) on - state resistance V = 10V, I = 15A GS D - 155 220 T = 125C j g V = 10V, I = 15A Forward transfer admittance 13 26 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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