Data Sheet 4V Drive Nch MOSFET RSJ300N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS TO-263(D2PAK) 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) Built-in G-S Protection Diode. 0.4 2.54 0.78 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 1000 2 RSJ300N10 Absolute maximum ratings (Ta = 25 C) (1) Gate (1) (2) (3) (2) Drain Parameter Symbol Limits Unit 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Drain-source voltage V 100 V DSS Gate-source voltage V 20 V GSS *1 Continuous I 30 A D Drain current *2 Pulsed I 60 A DP *1 Continuous I 30 A Source current S (Body Diode) *2 Pulsed I 60 A SP *3 Power dissipation P 50 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Limited only by maximum temperature allowed. *2 Pw10s, Duty cycle1% *3 T =25 c Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (ch-c) 2.5 C / W *Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Not Recommended for New Designs 13.1 3.0 9.0 1.0 1.2Data Sheet RSJ300N10 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 100 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =100V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -33 52 I =15A, V =10V D GS Static drain-source on-state * R m DS (on) -36 58 I =15A, V =4.5V D GS resistance -38 59 I =15A, V =4.0V D GS * Forward transfer admittance l Y l15 - - S I =15A, V =10V fs D DS Input capacitance C - 2200 - pF V =25V iss DS Output capacitance C - 190 - pF V =0V oss GS Reverse transfer capacitance C - 120 - pF f=1MHz rss Turn-on delay time t - 20 - ns I =15A, V 50V * d(on) D DD Rise time t - 65 - ns V =10V r * GS Turn-off delay time t - 130 - ns R =3.3 * d(off) L Fall time t - 180 - ns R =10 * f G Total gate charge Q * - 50 - nC I =30A, V 50V g D DD Gate-source charge Q -6 - nCV =10V * gs GS Gate-drain charge Q -15 - nC gd * *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =30A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 2/6 Not Recommended for New Designs