RSQ035N03TR ROHM

RSQ035N03 Transistors 4V Drive Nch MOS FET RSQ035N03 z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1 (1) (2) (3) 1pin mark 0.16 0.4 zApplications Each lead has same dimensions Switching Abbreviated symbol : QN z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 2 RSQ035N03 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit V 30 V Drain-source voltage DSS Gate-source voltage VGSS 20 V Continuous ID 3.5 A Drain current 1 Pulsed IDP 14 A I 1.0 A Source current Continuous S 1 (Body diode) Pulsed ISP 14 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Tstg 55 to +150 C Range of storage temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C/W Mounted on a ceramic board 1/2 1.6 2.8 0.3~0.6RSQ035N03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 44 62 m I = 3.5A, V = 10V D GS Static drain-source on-state RDS (on) 60 84 m ID= 3.5A, VGS= 4.5V resistance 67 94 m ID= 3.5A, VGS= 4V Forward transfer admittance Yfs 2.0 SVDS= 10V, ID= 3.5A Input capacitance C 290 pF V = 10V iss DS Output capacitance Coss 85 pF VGS=0V Reverse transfer capacitance Crss 55 pF f=1MHz Turn-on delay time t 7 ns VDD 15V d (on) ID= 1.75A Rise time tr 9 ns VGS= 10V Turn-off delay time td (off) 24 ns RL=8.57 Fall time tf 6 ns RG=10 Q 5.3 7.4 nC V 15V V = 5V Total gate charge g DD GS ID= 3.5A Gate-source charge Qgs 1.0 nC RL= 4.29 RG=10 Gate-drain charge Qgd1.4 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 1.0A, VGS=0V 2/2